Reflectivity measurements of deeply etched DBR gratings in InP-based double heterostructures

B. Docter, E.J. Geluk, T. Smet, de, F. Karouta, M.K. Smit

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Abstract

A three-level masking process has been developed for etching DBR gratings in InP/InGaAsP double hetero-structures. The masking consists of a ZEP/Cr/SiOx layer stack. The ZEP layer is used to open the Cr which is a good mask for etching anisotropically the SiOx layer. The InP-based double heterostructure is etched in an ICP process using Cl2:Ar:H2. With this process deep etched waveguides are simultaneously etched with the DBR gratings with various numbers of periods (1 to 5). 2 µm wide waveguides show a loss of 3 dB/cm and the reflectivity of a 2 period DBR grating was found to be 80%.
Original languageEnglish
Title of host publicationProceedings of the 12th Annual Symposium of the IEEE/LEOS Benelux Chapter, 17-18 December 2007, Brussels, Belgium
EditorsM. Delqué, Ph. Emplit, S.P. Gorza, P. Kockaert, X.J.M. Leijtens
Place of PublicationBrussels
PublisherIEEE/LEOS
Pages111-114
ISBN (Print)978-2-9600753-0-4
Publication statusPublished - 2007
Event12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium - Brussels, Belgium
Duration: 17 Dec 200718 Dec 2007

Conference

Conference12th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 17-18, 2007, Brussels, Belgium
CountryBelgium
CityBrussels
Period17/12/0718/12/07

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