Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks

K. Lawniczuk; O. Patard; R. Guillamet; N. Chimot; A. Garreau; C. Kazmierski; G. Aubin; K. Merghem

doi:10.1109/ICIPRM.2012.6403334

Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks

K. Lawniczuk
, O. Patard
, R. Guillamet
, N. Chimot
, A. Garreau
, C. Kazmierski
, G. Aubin
, K. Merghem

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.

Original language	English
Title of host publication	Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	116-119
DOIs	https://doi.org/10.1109/ICIPRM.2012.6403334
Publication status	Published - 2012
Event	conference; IRPM 2012; 2012-08-27; 2012-08-30 - Duration: 27 Aug 2012 → 30 Aug 2012

Conference

Conference	conference; IRPM 2012; 2012-08-27; 2012-08-30
Period	27/08/12 → 30/08/12
Other	IRPM 2012

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10.1109/ICIPRM.2012.6403334

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Lawniczuk, K., Patard, O., Guillamet, R., Chimot, N., Garreau, A., Kazmierski, C., Aubin, G., & Merghem, K. (2012). Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks. In Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California (pp. 116-119). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2012.6403334

Lawniczuk, K. ; Patard, O. ; Guillamet, R. et al. / Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks. Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California. Piscataway : Institute of Electrical and Electronics Engineers, 2012. pp. 116-119

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title = "Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks",

abstract = "In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.",

author = "K. Lawniczuk and O. Patard and R. Guillamet and N. Chimot and A. Garreau and C. Kazmierski and G. Aubin and K. Merghem",

year = "2012",

doi = "10.1109/ICIPRM.2012.6403334",

language = "English",

pages = "116--119",

booktitle = "Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; IRPM 2012; 2012-08-27; 2012-08-30 ; Conference date: 27-08-2012 Through 30-08-2012",

}

Lawniczuk, K, Patard, O, Guillamet, R, Chimot, N, Garreau, A, Kazmierski, C, Aubin, G & Merghem, K 2012, Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks. in Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California. Institute of Electrical and Electronics Engineers, Piscataway, pp. 116-119, conference; IRPM 2012; 2012-08-27; 2012-08-30, 27/08/12. https://doi.org/10.1109/ICIPRM.2012.6403334

Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks. / Lawniczuk, K.; Patard, O.; Guillamet, R. et al.
Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California. Piscataway: Institute of Electrical and Electronics Engineers, 2012. p. 116-119.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

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AU - Lawniczuk, K.

AU - Patard, O.

AU - Guillamet, R.

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AU - Garreau, A.

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AU - Aubin, G.

AU - Merghem, K.

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N2 - In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.

AB - In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.

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BT - Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - conference; IRPM 2012; 2012-08-27; 2012-08-30

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ER -

Lawniczuk K, Patard O, Guillamet R, Chimot N, Garreau A, Kazmierski C et al. Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks. In Proceedings of the 2012 International Conference on Indium Phosphide and Related Materials (IPRM), 27-30 August 2012, Santa Barbara, California. Piscataway: Institute of Electrical and Electronics Engineers. 2012. p. 116-119 doi: 10.1109/ICIPRM.2012.6403334

Reflective amplified modulator operating at 40 Gbps up to 85ºC as colorless transceiver for optical access networks

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