Reduction of reflection losses in solid-state image sensors

C.H.L. Weijtens, W. C. Keur

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)

Abstract

The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

Original languageEnglish
Pages (from-to)75-81
Number of pages5
JournalProceedings of SPIE
Volume0591
DOIs
Publication statusPublished - 1 May 1986
Externally publishedYes
Event1985 INTERNATIONAL TECHNICAL SYMPOSIUM/EUROPE - Cannes, France
Duration: 25 Nov 198527 Nov 1985

Fingerprint Dive into the research topics of 'Reduction of reflection losses in solid-state image sensors'. Together they form a unique fingerprint.

Cite this