Reduction of reflection losses in solid-state image sensors

C.H.L. Weijtens, W. C. Keur

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)

Abstract

The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

Original languageEnglish
Pages (from-to)75-81
Number of pages5
JournalProceedings of SPIE
Volume0591
DOIs
Publication statusPublished - 1 May 1986
Externally publishedYes
Event1985 INTERNATIONAL TECHNICAL SYMPOSIUM/EUROPE - Cannes, France
Duration: 25 Nov 198527 Nov 1985

Fingerprint

Solid-state sensors
Photosensitivity
Image Sensor
Charge coupled devices
Polysilicon
Image sensors
solid state
Charge-coupled Device
Wavelength
Electrodes
sensitivity
sensors
Reflectance
Electrode
charge coupled devices
Silicon
reflectance
electrodes
silicon
wavelengths

Cite this

@article{07e486a118f74bd6aa16dfe5b322f718,
title = "Reduction of reflection losses in solid-state image sensors",
abstract = "The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.",
author = "C.H.L. Weijtens and Keur, {W. C.}",
year = "1986",
month = "5",
day = "1",
doi = "10.1117/12.952081",
language = "English",
volume = "0591",
pages = "75--81",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

Reduction of reflection losses in solid-state image sensors. / Weijtens, C.H.L.; Keur, W. C.

In: Proceedings of SPIE, Vol. 0591, 01.05.1986, p. 75-81.

Research output: Contribution to journalConference articleAcademicpeer-review

TY - JOUR

T1 - Reduction of reflection losses in solid-state image sensors

AU - Weijtens, C.H.L.

AU - Keur, W. C.

PY - 1986/5/1

Y1 - 1986/5/1

N2 - The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

AB - The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

UR - http://www.scopus.com/inward/record.url?scp=84957531431&partnerID=8YFLogxK

U2 - 10.1117/12.952081

DO - 10.1117/12.952081

M3 - Conference article

AN - SCOPUS:84957531431

VL - 0591

SP - 75

EP - 81

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

ER -