Reduction of reflection losses in solid-state image sensors

C.H.L. Weijtens; W. C. Keur

doi:10.1117/12.952081

Reduction of reflection losses in solid-state image sensors

C.H.L. Weijtens, W. C. Keur

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

Original language	English
Pages (from-to)	75-81
Number of pages	5
Journal	Proceedings of SPIE
Volume	0591
DOIs	https://doi.org/10.1117/12.952081
Publication status	Published - 1 May 1986
Externally published	Yes
Event	1985 INTERNATIONAL TECHNICAL SYMPOSIUM/EUROPE - Cannes, France Duration: 25 Nov 1985 → 27 Nov 1985

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title = "Reduction of reflection losses in solid-state image sensors",

abstract = "The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.",

author = "C.H.L. Weijtens and Keur, {W. C.}",

year = "1986",

month = may,

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doi = "10.1117/12.952081",

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T1 - Reduction of reflection losses in solid-state image sensors

AU - Weijtens, C.H.L.

AU - Keur, W. C.

PY - 1986/5/1

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N2 - The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

AB - The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

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U2 - 10.1117/12.952081

DO - 10.1117/12.952081

M3 - Conference article

AN - SCOPUS:84957531431

SN - 0277-786X

VL - 0591

SP - 75

EP - 81

JO - Proceedings of SPIE

JF - Proceedings of SPIE

T2 - 1985 INTERNATIONAL TECHNICAL SYMPOSIUM/EUROPE

Y2 - 25 November 1985 through 27 November 1985

ER -

Reduction of reflection losses in solid-state image sensors

Abstract

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