Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature

K. Ding, M.T. Hill, Z.C. Liu, L.J. Yin, P.J. Veldhoven, van, C.Z. Ning

Research output: Contribution to journalArticleAcademicpeer-review

141 Citations (Scopus)
178 Downloads (Pure)

Abstract

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67 lambda(3) (lambda = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures. (C) 2013 Optical Society of America
Original languageEnglish
Pages (from-to)4728-4733
Number of pages6
JournalOptics Express
Volume21
Issue number4
DOIs
Publication statusPublished - 2013

Fingerprint

Dive into the research topics of 'Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature'. Together they form a unique fingerprint.

Cite this