Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

K. Landheer, P.C.P. Bronsveld, I. Poulios, F.D. Tichelaar, M. Kaiser, R.E.I. Schropp, J.K. Rath

Research output: Contribution to journalLetterAcademicpeer-review

1 Citation (Scopus)

Abstract

An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

LanguageEnglish
Pages1226-1230
Number of pages5
JournalApplied Surface Science
Volume396
DOIs
StatePublished - 28 Feb 2017

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Oxides
Plasmas
Annealing
Silicon wafers
Passivation
Hydrogen
Solar cells
Tunnels
Temperature

Cite this

Landheer, K., Bronsveld, P. C. P., Poulios, I., Tichelaar, F. D., Kaiser, M., Schropp, R. E. I., & Rath, J. K. (2017). Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment. Applied Surface Science, 396, 1226-1230. DOI: 10.1016/j.apsusc.2016.11.119
Landheer, K. ; Bronsveld, P.C.P. ; Poulios, I. ; Tichelaar, F.D. ; Kaiser, M. ; Schropp, R.E.I. ; Rath, J.K./ Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment. In: Applied Surface Science. 2017 ; Vol. 396. pp. 1226-1230
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abstract = "An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.",
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Landheer, K, Bronsveld, PCP, Poulios, I, Tichelaar, FD, Kaiser, M, Schropp, REI & Rath, JK 2017, 'Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment' Applied Surface Science, vol. 396, pp. 1226-1230. DOI: 10.1016/j.apsusc.2016.11.119

Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment. / Landheer, K.; Bronsveld, P.C.P.; Poulios, I.; Tichelaar, F.D.; Kaiser, M.; Schropp, R.E.I.; Rath, J.K.

In: Applied Surface Science, Vol. 396, 28.02.2017, p. 1226-1230.

Research output: Contribution to journalLetterAcademicpeer-review

TY - JOUR

T1 - Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

AU - Landheer,K.

AU - Bronsveld,P.C.P.

AU - Poulios,I.

AU - Tichelaar,F.D.

AU - Kaiser,M.

AU - Schropp,R.E.I.

AU - Rath,J.K.

PY - 2017/2/28

Y1 - 2017/2/28

N2 - An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

AB - An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

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DO - 10.1016/j.apsusc.2016.11.119

M3 - Letter

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JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

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Landheer K, Bronsveld PCP, Poulios I, Tichelaar FD, Kaiser M, Schropp REI et al. Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment. Applied Surface Science. 2017 Feb 28;396:1226-1230. Available from, DOI: 10.1016/j.apsusc.2016.11.119