Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

K. Landheer, P.C.P. Bronsveld, I. Poulios, F.D. Tichelaar, M. Kaiser, R.E.I. Schropp, J.K. Rath

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Abstract

An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

Original languageEnglish
Pages (from-to)1226-1230
Number of pages5
JournalApplied Surface Science
Volume396
DOIs
Publication statusPublished - 28 Feb 2017

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Landheer, K., Bronsveld, P. C. P., Poulios, I., Tichelaar, F. D., Kaiser, M., Schropp, R. E. I., & Rath, J. K. (2017). Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment. Applied Surface Science, 396, 1226-1230. https://doi.org/10.1016/j.apsusc.2016.11.119