TY - JOUR
T1 - Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn
AU - Niemelä, Janne
AU - Macco, Bart
AU - Barraud, Loris
AU - Descoeudres, Antoine
AU - Badel, Nicolas
AU - Despeisse, Matthieu
AU - Christmann, Gabriel
AU - Nicolay, Sylvian
AU - Ballif, C.
AU - Kessels, Erwin
AU - Creatore, Adriana
PY - 2019/9/15
Y1 - 2019/9/15
N2 - Here high-efficiency (above 21%) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.
AB - Here high-efficiency (above 21%) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.
KW - Atomic layer deposition
KW - Rear emitter solar cell
KW - Silicon heterojunction solar cell
KW - Transparent conducting oxide
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=85065889867&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2019.109953
DO - 10.1016/j.solmat.2019.109953
M3 - Article
SN - 0927-0248
VL - 200
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 109953
M1 - 109953
ER -
