Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn

Janne Niemelä (Corresponding author), Bart Macco (Corresponding author), Loris Barraud, Antoine Descoeudres, Nicolas Badel, Matthieu Despeisse, Gabriel Christmann, Sylvian Nicolay, C. Ballif, Erwin Kessels, Adriana Creatore

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Abstract

Here high-efficiency (above 21%) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.
Original languageEnglish
Article number109953
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume200
Issue number109953
DOIs
Publication statusPublished - 15 Sep 2019

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Silicon
Passivation
Oxides
Heterojunctions
Solar cells
Doping (additives)

Keywords

  • Atomic layer deposition
  • Rear emitter solar cell
  • Silicon heterojunction solar cell
  • Transparent conducting oxide
  • Zinc oxide

Cite this

Niemelä, Janne ; Macco, Bart ; Barraud, Loris ; Descoeudres, Antoine ; Badel, Nicolas ; Despeisse, Matthieu ; Christmann, Gabriel ; Nicolay, Sylvian ; Ballif, C. ; Kessels, Erwin ; Creatore, Adriana. / Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn. In: Solar Energy Materials and Solar Cells. 2019 ; Vol. 200, No. 109953.
@article{34fe2edfae1e47b6aa5b8604ab15234f,
title = "Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn",
abstract = "Here high-efficiency (above 21{\%}) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.",
keywords = "Atomic layer deposition, Rear emitter solar cell, Silicon heterojunction solar cell, Transparent conducting oxide, Zinc oxide",
author = "Janne Niemel{\"a} and Bart Macco and Loris Barraud and Antoine Descoeudres and Nicolas Badel and Matthieu Despeisse and Gabriel Christmann and Sylvian Nicolay and C. Ballif and Erwin Kessels and Adriana Creatore",
year = "2019",
month = "9",
day = "15",
doi = "10.1016/j.solmat.2019.109953",
language = "English",
volume = "200",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "109953",

}

Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn. / Niemelä, Janne (Corresponding author); Macco, Bart (Corresponding author); Barraud, Loris; Descoeudres, Antoine; Badel, Nicolas; Despeisse, Matthieu; Christmann, Gabriel; Nicolay, Sylvian; Ballif, C.; Kessels, Erwin; Creatore, Adriana.

In: Solar Energy Materials and Solar Cells, Vol. 200, No. 109953, 109953, 15.09.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Rear-emitter silicon heterojunction solar cells with atomic layer deposited ZnO:Al serving as an alternative transparent conducting oxide to In2O3:Sn

AU - Niemelä, Janne

AU - Macco, Bart

AU - Barraud, Loris

AU - Descoeudres, Antoine

AU - Badel, Nicolas

AU - Despeisse, Matthieu

AU - Christmann, Gabriel

AU - Nicolay, Sylvian

AU - Ballif, C.

AU - Kessels, Erwin

AU - Creatore, Adriana

PY - 2019/9/15

Y1 - 2019/9/15

N2 - Here high-efficiency (above 21%) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.

AB - Here high-efficiency (above 21%) large-area silicon heterojunction solar cells with atomic layer deposited ZnO:Al as front-or back-side transparent conducting oxide are demonstrated. Photoconductance decay measurements indicate that the excellent chemical passivation provided by the a-Si:H(i,p) and a-Si:H(i,n) stacks is preserved upon deposition of ZnO:Al, and that field-effect passivation losses for the a-Si:H(i,p)/ZnO:Al contact can be mitigated by lowering the Al dopinglevel. Use of low Al-doping is enabled by the rear-emitter configuration which, in addition to facilitating the a-Si:H(i,p)/ZnO:Al contact engineering, enables a higher photo-current due to the decrease in free-carrier absorption in ZnO:Al. The results encourage the use of In-free transparent conducting oxides in silicon heterojunction solar cells, as the replacement of In2O3:Sn without efficiency loss is demonstrated.

KW - Atomic layer deposition

KW - Rear emitter solar cell

KW - Silicon heterojunction solar cell

KW - Transparent conducting oxide

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=85065889867&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2019.109953

DO - 10.1016/j.solmat.2019.109953

M3 - Article

VL - 200

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 109953

M1 - 109953

ER -