Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

I.M.P. Aarts; J.J.H. Gielis; P.M.J. Grauls; C.M. Leewis; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1016/j.tsf.2005.07.109

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

I.M.P. Aarts, J.J.H. Gielis, P.M.J. Grauls, C.M. Leewis, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films deposited by HWCVD have been investigated by the surface/interface-sensitive nonlinear technique of optical second harmonic generation (SHG). In situ spectral SHG scans have revealed two resonance peaks at 1.2 eV and 1.45 eV corresponding with electronic states (e.g., Si dangling bonds, Si–Si strained bonds) at the surface/interface of the a-Si:H with an isotropic distribution. The data are compared to SHG results obtained ex situ for a-Si:H films deposited by an rf plasma. The first real-time SHG experiments during HWCVD a-Si:H film growth are presented.

Original language	English
Pages (from-to)	70-74
Journal	Thin Solid Films
Volume	501
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.109
Publication status	Published - 2006

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title = "Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy",

abstract = "Hydrogenated amorphous silicon (a-Si:H) thin films deposited by HWCVD have been investigated by the surface/interface-sensitive nonlinear technique of optical second harmonic generation (SHG). In situ spectral SHG scans have revealed two resonance peaks at 1.2 eV and 1.45 eV corresponding with electronic states (e.g., Si dangling bonds, Si–Si strained bonds) at the surface/interface of the a-Si:H with an isotropic distribution. The data are compared to SHG results obtained ex situ for a-Si:H films deposited by an rf plasma. The first real-time SHG experiments during HWCVD a-Si:H film growth are presented.",

author = "I.M.P. Aarts and J.J.H. Gielis and P.M.J. Grauls and C.M. Leewis and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

year = "2006",

doi = "10.1016/j.tsf.2005.07.109",

language = "English",

volume = "501",

pages = "70--74",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

AU - Aarts, I.M.P.

AU - Gielis, J.J.H.

AU - Grauls, P.M.J.

AU - Leewis, C.M.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2006

Y1 - 2006

N2 - Hydrogenated amorphous silicon (a-Si:H) thin films deposited by HWCVD have been investigated by the surface/interface-sensitive nonlinear technique of optical second harmonic generation (SHG). In situ spectral SHG scans have revealed two resonance peaks at 1.2 eV and 1.45 eV corresponding with electronic states (e.g., Si dangling bonds, Si–Si strained bonds) at the surface/interface of the a-Si:H with an isotropic distribution. The data are compared to SHG results obtained ex situ for a-Si:H films deposited by an rf plasma. The first real-time SHG experiments during HWCVD a-Si:H film growth are presented.

AB - Hydrogenated amorphous silicon (a-Si:H) thin films deposited by HWCVD have been investigated by the surface/interface-sensitive nonlinear technique of optical second harmonic generation (SHG). In situ spectral SHG scans have revealed two resonance peaks at 1.2 eV and 1.45 eV corresponding with electronic states (e.g., Si dangling bonds, Si–Si strained bonds) at the surface/interface of the a-Si:H with an isotropic distribution. The data are compared to SHG results obtained ex situ for a-Si:H films deposited by an rf plasma. The first real-time SHG experiments during HWCVD a-Si:H film growth are presented.

U2 - 10.1016/j.tsf.2005.07.109

DO - 10.1016/j.tsf.2005.07.109

M3 - Article

SN - 0040-6090

VL - 501

SP - 70

EP - 74

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

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