Real time spectroscopic ellipsometry on ultrathin (

P.J. Oever, van den; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.2749466

Real time spectroscopic ellipsometry on ultrathin (

P.J. Oever, van den
, M.C.M. Sanden, van de
, W.M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d

Original language	English
Article number	123529
Pages (from-to)	123529-1/10
Number of pages	10
Journal	Journal of Applied Physics
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.2749466
Publication status	Published - 2007

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@article{450c5e12bf8849f3a4998627f5fb9271,

title = "Real time spectroscopic ellipsometry on ultrathin (",

abstract = "Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d",

author = "\{Oever, van den\}, P.J. and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

year = "2007",

doi = "10.1063/1.2749466",

language = "English",

volume = "101",

pages = "123529--1/10",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Real time spectroscopic ellipsometry on ultrathin (

AU - Oever, van den, P.J.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2007

Y1 - 2007

N2 - Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d

AB - Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d

U2 - 10.1063/1.2749466

DO - 10.1063/1.2749466

M3 - Article

SN - 0021-8979

VL - 101

SP - 123529-1/10

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123529

ER -

Real time spectroscopic ellipsometry on ultrathin (

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