Real time spectroscopic ellipsometry on ultrathin (

P.J. Oever, van den; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.2749466

Real time spectroscopic ellipsometry on ultrathin (

P.J. Oever, van den, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d

Original language	English
Article number	123529
Pages (from-to)	123529-1/10
Number of pages	10
Journal	Journal of Applied Physics
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.2749466
Publication status	Published - 2007

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Real time spectroscopic ellipsometry on ultrathin (

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