Real time spectroscopic ellipsometry on ultrathin (

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Abstract

Real time spectroscopic ellipsometry was used to det. the time evolution of the dielec. function, bulk thickness, and surface roughness during hot-wire chem. vapor deposition of hydrogenated amorphous silicon (a-Si:H). The amorphous silicon films were deposited on native-oxide-covered c-Si(100) and GaAs(100) substrates at temps. in the range from 70 to 350 DegC. Data anal. by a three layer optical model, consisting of substrate, bulk, and surface roughness layer, revealed that the dielec. function of the a-Si:H film changes in the initial growth regime (d
Original languageEnglish
Article number123529
Pages (from-to)123529-1/10
Number of pages10
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 2007

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