Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions

C.G.C.H.M. Fabrie; C.A.M. Knechten; J.T. Kohlhepp; H.J.M. Swagten; B. Koopmans; W.J.M. Jonge, de

doi:10.1063/1.2166696

Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions

C.G.C.H.M. Fabrie, C.A.M. Knechten, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans, W.J.M. Jonge, de

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

209 Downloads (Pure)

Abstract

We show that over-oxidn. of sub-nm thin Al2O3 barriers of magnetic tunnel junctions can be obsd. in real time using in situ differential ellipsometry measurements. The change in ellipsometry signal of Al layers grown on CoFe films is proportional to the amt. of oxidized metallic material. As a result, the deriv. of this signal is a direct measure of the oxidn. rate. Further anal. of this oxidn. rate allows us to det. the onset of the CoFe oxidn. We found the onset to be proportional to the deposited Al layer thickness. The amt. of CoO detd. from in situ XPS data on identical samples was found to be proportional to that obtained from ellipsometry. [on SciFinder (R)]

Original language	English
Article number	031909
Pages (from-to)	031909-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2166696
Publication status	Published - 2006

Access to Document

10.1063/1.2166696

Metis198557Final published version, 288 KB

Cite this

@article{336bee40de9a46508b9f570625d9e384,

title = "Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions",

abstract = "We show that over-oxidn. of sub-nm thin Al2O3 barriers of magnetic tunnel junctions can be obsd. in real time using in situ differential ellipsometry measurements. The change in ellipsometry signal of Al layers grown on CoFe films is proportional to the amt. of oxidized metallic material. As a result, the deriv. of this signal is a direct measure of the oxidn. rate. Further anal. of this oxidn. rate allows us to det. the onset of the CoFe oxidn. We found the onset to be proportional to the deposited Al layer thickness. The amt. of CoO detd. from in situ XPS data on identical samples was found to be proportional to that obtained from ellipsometry. [on SciFinder (R)]",

author = "C.G.C.H.M. Fabrie and C.A.M. Knechten and J.T. Kohlhepp and H.J.M. Swagten and B. Koopmans and {Jonge, de}, W.J.M.",

year = "2006",

doi = "10.1063/1.2166696",

language = "English",

volume = "88",

pages = "031909--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions

AU - Fabrie, C.G.C.H.M.

AU - Knechten, C.A.M.

AU - Kohlhepp, J.T.

AU - Swagten, H.J.M.

AU - Koopmans, B.

AU - Jonge, de, W.J.M.

PY - 2006

Y1 - 2006

N2 - We show that over-oxidn. of sub-nm thin Al2O3 barriers of magnetic tunnel junctions can be obsd. in real time using in situ differential ellipsometry measurements. The change in ellipsometry signal of Al layers grown on CoFe films is proportional to the amt. of oxidized metallic material. As a result, the deriv. of this signal is a direct measure of the oxidn. rate. Further anal. of this oxidn. rate allows us to det. the onset of the CoFe oxidn. We found the onset to be proportional to the deposited Al layer thickness. The amt. of CoO detd. from in situ XPS data on identical samples was found to be proportional to that obtained from ellipsometry. [on SciFinder (R)]

AB - We show that over-oxidn. of sub-nm thin Al2O3 barriers of magnetic tunnel junctions can be obsd. in real time using in situ differential ellipsometry measurements. The change in ellipsometry signal of Al layers grown on CoFe films is proportional to the amt. of oxidized metallic material. As a result, the deriv. of this signal is a direct measure of the oxidn. rate. Further anal. of this oxidn. rate allows us to det. the onset of the CoFe oxidn. We found the onset to be proportional to the deposited Al layer thickness. The amt. of CoO detd. from in situ XPS data on identical samples was found to be proportional to that obtained from ellipsometry. [on SciFinder (R)]

U2 - 10.1063/1.2166696

DO - 10.1063/1.2166696

M3 - Article

SN - 0003-6951

VL - 88

SP - 031909-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031909

ER -

Real-time monitoring of plasma oxidation dynamics of subnanometer Al2O3 barriers for magnetic tunnel junctions

Abstract

Access to Document

Fingerprint

Cite this