Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim H. Wolter, Jos E. Haverkort, Peter Hendriks, E.A.E. Zwaal

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al xGa1-xAs, injection of electrons from the contacts into the AlxGa 1-xAs layer opens a conductive channel in the AlxGa1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the AlxGa1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors
EditorsDavid K. Ferry, Henry M. van Driel
PublisherSPIE
Pages296-313
Number of pages18
ISBN (Print)0819414379, 9780819414373
Publication statusPublished - 1 Dec 1994
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: 27 Jan 199428 Jan 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2142
ISSN (Print)0277-786X

Conference

ConferenceUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA
Period27/01/9428/01/94

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