Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim H. Wolter; Jos E. Haverkort; Peter Hendriks; E.A.E. Zwaal

Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim H. Wolter, Jos E. Haverkort, Peter Hendriks, E.A.E. Zwaal

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al_xGa_1-xAs, injection of electrons from the contacts into the Al_xGa_1-xAs layer opens a conductive channel in the Al_xGa_1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the Al_xGa_1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

Original language	English
Title of host publication	Ultrafast Phenomena in Semiconductors
Editors	David K. Ferry, Henry M. van Driel
Publisher	SPIE
Pages	296-313
Number of pages	18
ISBN (Print)	0819414379, 9780819414373
Publication status	Published - 1 Dec 1994
Event	Ultrafast Phenomena in Semiconductors - Los Angeles, CA, USA Duration: 27 Jan 1994 → 28 Jan 1994

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2142
ISSN (Print)	0277-786X

Conference

Conference	Ultrafast Phenomena in Semiconductors
City	Los Angeles, CA, USA
Period	27/01/94 → 28/01/94

Cite this

Wolter, J. H., Haverkort, J. E., Hendriks, P., & Zwaal, E. A. E. (1994). Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields. In D. K. Ferry, & H. M. van Driel (Eds.), Ultrafast Phenomena in Semiconductors (pp. 296-313). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142). SPIE.

@inproceedings{d68958d915fe4286bb5fa7ba71d6f909,

title = "Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields",

abstract = "At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al xGa1-xAs, injection of electrons from the contacts into the AlxGa 1-xAs layer opens a conductive channel in the AlxGa1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the AlxGa1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.",

author = "Wolter, {Joachim H.} and Haverkort, {Jos E.} and Peter Hendriks and E.A.E. Zwaal",

year = "1994",

month = dec,

day = "1",

language = "English",

isbn = "0819414379",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

pages = "296--313",

editor = "Ferry, {David K.} and {van Driel}, {Henry M.}",

booktitle = "Ultrafast Phenomena in Semiconductors",

address = "United States",

note = "Ultrafast Phenomena in Semiconductors ; Conference date: 27-01-1994 Through 28-01-1994",

}

Wolter, JH, Haverkort, JE, Hendriks, P & Zwaal, EAE 1994, Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields. in DK Ferry & HM van Driel (eds), Ultrafast Phenomena in Semiconductors. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2142, SPIE, pp. 296-313, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 27/01/94.

Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields. / Wolter, Joachim H.; Haverkort, Jos E.; Hendriks, Peter et al.
Ultrafast Phenomena in Semiconductors. ed. / David K. Ferry; Henry M. van Driel. SPIE, 1994. p. 296-313 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

AU - Wolter, Joachim H.

AU - Haverkort, Jos E.

AU - Hendriks, Peter

AU - Zwaal, E.A.E.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al xGa1-xAs, injection of electrons from the contacts into the AlxGa 1-xAs layer opens a conductive channel in the AlxGa1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the AlxGa1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

AB - At high electric fields negative differential resistance and oscillatory behavior of the current is observed in 2-dimensional electron gases in modulation doped heterostructures. We develop a model in which the understanding of these phenomena is provided by the ohmic contacts to the 2-dimensional electron gas. The key phenomenon is that at a high electric field, well below the threshold field for real space transfer across the interface between the GaAs and the Al xGa1-xAs, injection of electrons from the contacts into the AlxGa 1-xAs layer opens a conductive channel in the AlxGa1-xAs parallel to the 2-dimensional electron gas in the GaAs layer. We show that avalanche ionization in the AlxGa1-xAs layer leads to current filamentation. We studied this behavior for various experimental conditions by means of a novel technique which we developed for this purpose: the technique of time resolved optical beam induced current.

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M3 - Conference contribution

AN - SCOPUS:0028746121

SN - 0819414379

SN - 9780819414373

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 296

EP - 313

BT - Ultrafast Phenomena in Semiconductors

A2 - Ferry, David K.

A2 - van Driel, Henry M.

PB - SPIE

T2 - Ultrafast Phenomena in Semiconductors

Y2 - 27 January 1994 through 28 January 1994

ER -

Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

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