Reactive ion etching of GaN : results and morphology

F. Karouta; P. Vreugdewater; L.M.F. Kaufmann; O. Schön; H. Protzmann; M. Heuken

Reactive ion etching of GaN : results and morphology

F. Karouta, P. Vreugdewater, L.M.F. Kaufmann, O. Schön, H. Protzmann, M. Heuken

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998
Place of Publication	Gent
Publisher	University of Gent
Pages	169-172
ISBN (Print)	90-76546-01-0
Publication status	Published - 1998
Event	3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Ghent, Belgium - Ghent, Belgium Duration: 26 Nov 1998 → 26 Nov 1998

Conference

Conference	3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Ghent, Belgium
Country/Territory	Belgium
City	Ghent
Period	26/11/98 → 26/11/98

Cite this

@inproceedings{9852c609b81f403f8992b43ac9d6bfa7,

title = "Reactive ion etching of GaN : results and morphology",

author = "F. Karouta and P. Vreugdewater and L.M.F. Kaufmann and O. Sch{\"o}n and H. Protzmann and M. Heuken",

year = "1998",

language = "English",

isbn = "90-76546-01-0",

pages = "169--172",

booktitle = "Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998",

publisher = "University of Gent",

note = "3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Ghent, Belgium ; Conference date: 26-11-1998 Through 26-11-1998",

}

Karouta, F, Vreugdewater, P, Kaufmann, LMF, Schön, O, Protzmann, H & Heuken, M 1998, Reactive ion etching of GaN : results and morphology. in Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. University of Gent, Gent, pp. 169-172, 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Ghent, Belgium, Ghent, Belgium, 26/11/98.

Reactive ion etching of GaN : results and morphology. / Karouta, F.; Vreugdewater, P.; Kaufmann, L.M.F. et al.
Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998. Gent: University of Gent, 1998. p. 169-172.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reactive ion etching of GaN : results and morphology

AU - Karouta, F.

AU - Vreugdewater, P.

AU - Kaufmann, L.M.F.

AU - Schön, O.

AU - Protzmann, H.

AU - Heuken, M.

PY - 1998

Y1 - 1998

M3 - Conference contribution

SN - 90-76546-01-0

SP - 169

EP - 172

BT - Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998

PB - University of Gent

CY - Gent

T2 - 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Ghent, Belgium

Y2 - 26 November 1998 through 26 November 1998

ER -