The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples.
|Journal||Diffusion and Defect Data. Part A, Defect and Diffusion Forum|
|Publication status||Published - 2001|
Kodentsov, A., Markovski, S. L., Cserhati, C., & Loo, van, F. J. J. (2001). Reactive Diffusion in the GaSb-Co System at 500°C. Diffusion and Defect Data. Part A, Defect and Diffusion Forum, 194-199, 1619-1624. https://doi.org/10.4028/3-908450-60-8.1619