Reactive Diffusion in the GaSb-Co System at 500°C

A. Kodentsov, S.L. Markovski, C. Cserhati, F.J.J. Loo, van

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Abstract

The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples.
Original languageEnglish
Pages (from-to)1619-1624
JournalDiffusion and Defect Data. Part A, Defect and Diffusion Forum
Volume194-199
DOIs
Publication statusPublished - 2001

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