Abstract
Plasma-assisted atomic layer deposition (ALD) can provide additional benefits to thermal ALD making it an attractive method for the semiconductor industry as well as in novel application fields.
In this contribution reaction mechanisms during plasma-assisted ALD of several materials will beaddressed on the basis of studies by a set of complementary gas phase and in situ film analyses techniques.
| Original language | English |
|---|---|
| Number of pages | 2 |
| Publication status | Published - 2008 |
| Event | conference; 30th International Conference on Dry Process; 2008-11-01; 2008-11-01 - Duration: 1 Nov 2008 → 1 Nov 2008 |
Conference
| Conference | conference; 30th International Conference on Dry Process; 2008-11-01; 2008-11-01 |
|---|---|
| Period | 1/11/08 → 1/11/08 |
| Other | 30th International Conference on Dry Process |
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