Reaction of nanometer-sized Cu particles with a SiO2 substrate

L.C.A. Oetelaar, van den; R.J.A. Oetelaar, van den; A. Partridge; C.F.J. Flipse; H.H. Brongersma

doi:10.1063/1.123977

Reaction of nanometer-sized Cu particles with a SiO2 substrate

L.C.A. Oetelaar, van den, R.J.A. Oetelaar, van den, A. Partridge, C.F.J. Flipse, H.H. Brongersma

Applied Physics and Science Education

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Abstract

The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a Si(100) substrate was studied after annealing in ultrahigh vacuum up to 620¿°C. Atomic force microscopy, low-energy ion scattering, Rutherford backscattering spectrometry, and Auger electron spectroscopy measurements clearly show that Cu-silicide islands are formed. A direct reaction of Cu with the SiO2 support is assumed, which is facilitated by a fairly strong metal-support interaction and by the wetting behavior of the silicide islands. Exposure to air at room temperature results in regeneration of the annealed Cu/SiO2 system.

Original language	English
Pages (from-to)	2954-2956
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	20
DOIs	https://doi.org/10.1063/1.123977
Publication status	Published - 1999

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title = "Reaction of nanometer-sized Cu particles with a SiO2 substrate",

abstract = "The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a Si(100) substrate was studied after annealing in ultrahigh vacuum up to 620¿°C. Atomic force microscopy, low-energy ion scattering, Rutherford backscattering spectrometry, and Auger electron spectroscopy measurements clearly show that Cu-silicide islands are formed. A direct reaction of Cu with the SiO2 support is assumed, which is facilitated by a fairly strong metal-support interaction and by the wetting behavior of the silicide islands. Exposure to air at room temperature results in regeneration of the annealed Cu/SiO2 system.",

author = "{Oetelaar, van den}, L.C.A. and {Oetelaar, van den}, R.J.A. and A. Partridge and C.F.J. Flipse and H.H. Brongersma",

year = "1999",

doi = "10.1063/1.123977",

language = "English",

volume = "74",

pages = "2954--2956",

journal = "Applied Physics Letters",

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T1 - Reaction of nanometer-sized Cu particles with a SiO2 substrate

AU - Oetelaar, van den, L.C.A.

AU - Oetelaar, van den, R.J.A.

AU - Partridge, A.

AU - Flipse, C.F.J.

AU - Brongersma, H.H.

PY - 1999

Y1 - 1999

N2 - The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a Si(100) substrate was studied after annealing in ultrahigh vacuum up to 620¿°C. Atomic force microscopy, low-energy ion scattering, Rutherford backscattering spectrometry, and Auger electron spectroscopy measurements clearly show that Cu-silicide islands are formed. A direct reaction of Cu with the SiO2 support is assumed, which is facilitated by a fairly strong metal-support interaction and by the wetting behavior of the silicide islands. Exposure to air at room temperature results in regeneration of the annealed Cu/SiO2 system.

AB - The thermal stability of nanometer-sized Cu particles on a 400–500 nm thick SiO2 layer on top of a Si(100) substrate was studied after annealing in ultrahigh vacuum up to 620¿°C. Atomic force microscopy, low-energy ion scattering, Rutherford backscattering spectrometry, and Auger electron spectroscopy measurements clearly show that Cu-silicide islands are formed. A direct reaction of Cu with the SiO2 support is assumed, which is facilitated by a fairly strong metal-support interaction and by the wetting behavior of the silicide islands. Exposure to air at room temperature results in regeneration of the annealed Cu/SiO2 system.

U2 - 10.1063/1.123977

DO - 10.1063/1.123977

M3 - Article

SN - 0003-6951

VL - 74

SP - 2954

EP - 2956

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Reaction of nanometer-sized Cu particles with a SiO2 substrate

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