Abstract
Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.
Original language | English |
---|---|
Pages (from-to) | 4875-4879 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 28 |
DOIs | |
Publication status | Published - 2014 |