Rationally designed single-crystalline nanowire networks

D. Car; J. Wang; M.A. Verheijen; E.P.A.M. Bakkers; S.R. Plissard

doi:10.1002/adma.201400924

Rationally designed single-crystalline nanowire networks

D. Car, J. Wang, M.A. Verheijen, E.P.A.M. Bakkers, S.R. Plissard

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.

Original language	English
Pages (from-to)	4875-4879
Journal	Advanced Materials
Volume	26
Issue number	28
DOIs	https://doi.org/10.1002/adma.201400924
Publication status	Published - 2014

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10.1002/adma.201400924

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title = "Rationally designed single-crystalline nanowire networks",

abstract = "Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.",

author = "D. Car and J. Wang and M.A. Verheijen and E.P.A.M. Bakkers and S.R. Plissard",

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AU - Car, D.

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AU - Verheijen, M.A.

AU - Bakkers, E.P.A.M.

AU - Plissard, S.R.

PY - 2014

Y1 - 2014

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AB - Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.

U2 - 10.1002/adma.201400924

DO - 10.1002/adma.201400924

M3 - Article

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SN - 0935-9648

VL - 26

SP - 4875

EP - 4879

JO - Advanced Materials

JF - Advanced Materials

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Rationally designed single-crystalline nanowire networks

Abstract

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