Abstract
A novel multilongitudinal-mode rate-equations description of the semiconductor laser is presented. The model includes gain interactions among the longitudinal modes due to e.g., spatial hole burning. The parameters have been obtained from a real device, in order to be able to compare with the simulations. The results are in good qualitative agreement with the measurements.
Original language | English |
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Pages (from-to) | 1229-1237 |
Number of pages | 9 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 39 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2003 |