Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor

C.J. Duan (Inventor), S. Roesler (Inventor), D. Starick (Inventor), H.T.J.M. Hintzen (Inventor), S Roesler (Inventor)

Research output: PatentPatent publication

Abstract

The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE).; According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor
Original languageEnglish
Patent numberWO2008EP63810
Publication statusPublished - 18 Nov 2010

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silicon nitrides
phosphors
rare earth elements
radiation
inventions
silicon
oxygen
manufacturing
optical properties
nitrogen
defects

Cite this

Duan, C. J., Roesler, S., Starick, D., Hintzen, H. T. J. M., & Roesler, S. (2010). Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor. (Patent No. WO2008EP63810).
Duan, C.J. (Inventor) ; Roesler, S. (Inventor) ; Starick, D. (Inventor) ; Hintzen, H.T.J.M. (Inventor) ; Roesler, S (Inventor). / Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor. Patent No.: WO2008EP63810.
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abstract = "The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE).; According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor",
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Duan, CJ, Roesler, S, Starick, D, Hintzen, HTJM & Roesler, S 2010, Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor, Patent No. WO2008EP63810.

Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor. / Duan, C.J. (Inventor); Roesler, S. (Inventor); Starick, D. (Inventor); Hintzen, H.T.J.M. (Inventor); Roesler, S (Inventor).

Patent No.: WO2008EP63810.

Research output: PatentPatent publication

TY - PAT

T1 - Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor

AU - Duan, C.J.

AU - Roesler, S.

AU - Starick, D.

AU - Hintzen, H.T.J.M.

AU - Roesler, S

PY - 2010/11/18

Y1 - 2010/11/18

N2 - The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE).; According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor

AB - The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE).; According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor

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M3 - Patent publication

M1 - WO2008EP63810

ER -

Duan CJ, Roesler S, Starick D, Hintzen HTJM, Roesler S, inventors. Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor. WO2008EP63810. 2010 Nov 18.