Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor

C.J. Duan (Inventor), S. Roesler (Inventor), D. Starick (Inventor), H.T.J.M. Hintzen (Inventor), S Roesler (Inventor)

Research output: PatentPatent publication

Abstract

The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE).; According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor
Original languageEnglish
Patent numberWO2008EP63810
Publication statusPublished - 18 Nov 2010

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