Abstract
Impurity diffusion in the d layer during the process of its growth has been considered. Experiments show that the spreading of the impurity profile has a complex dependence on the in-plane impurity concentration. We carried out the numerical simulation of the self-consistent diffusion problem for the impurities moving in their own random electric field and have shown that at some critical impurity concentration in d layer the impurity distribution function perpendicular to the layer acquires a non-Gaussian character.
Original language | English |
---|---|
Pages (from-to) | 3033-3036 |
Journal | Physical Review B |
Volume | 61 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2000 |