Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs

P. M. Koenraad, B. F.A. van Hest, F. A.P. Blom, R. van Dalen, M. Leys, J. A.A.J. Perenboom, J. H. Wolter

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Abstract

In this paper we present measurements of both the quantum- and transport mobility in two populated subbands of a Si-δ-doped GaAs structure. In these structures it is expected that ionized impurity scattering is the main scattering mechanism at low temperature. We investigated this by measuring both the transport and quantum mobility. We observe that both mobilities are independent of temperature between 1.2 and 4.2 K and find a ratio of the transport to quantum mobility of typically 2-3 in both populated subbands. Both results confirm the dominant role of ionized impurity scattering in Si-δ-doped GaAs at low temperatures.

Original languageEnglish
Pages (from-to)485-490
Number of pages6
JournalPhysica B: Physics of Condensed Matter
Volume177
Issue number1-4
DOIs
Publication statusPublished - 2 Mar 1992

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