Quantitative physical analysis of gate-insulator/organic-semiconductor interaction and its impact on the OTFT performance

F. Torricelli, D. Raiteri, L. Milani, L. Colalongo, Z.M. Kovacs-Vajna, P.J.G. Lieshout, van, E. Veenendaal, van, K. Myny, J. Genoe, G.H. Gelinck, E. Cantatore

Research output: Contribution to conferencePoster

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Abstract

Organic transistor parameters (i.e. threshold, stability, on/off current ratio, subthreshold slope) are not only defined by the organic semiconductor (OSC) itself, but they strongly depend on the interface between the OSC and the gate insulator (GI), the interface between the metal electrodes (source and drain) and the OSC, as well as on the transistor structure (i.e. coplanar or staggered). Since in Organic Thin-Film Transistors (OTFTs) the charge transport takes place very close to the GI/OSC interface [1], the interaction between the insulator and the semiconductor plays an important role in determining the transistor performance [2-4]. In this work, we provide a quantitative analysis of the interaction between the gate insulator and the organic semiconductor. OTFTs made with different structures, gate insulators, organic semiconductors, and fabrication processes are considered.
Original languageEnglish
Publication statusPublished - 2012
Eventconference; International Conference on Organic Electronics (ICOE); 2012-06-25; 2012-06-27 -
Duration: 25 Jun 201227 Jun 2012

Conference

Conferenceconference; International Conference on Organic Electronics (ICOE); 2012-06-25; 2012-06-27
Period25/06/1227/06/12
OtherInternational Conference on Organic Electronics (ICOE)

Bibliographical note

Proceedings of the 8th International Conference on Organic Electronics (ICOE), 25-27 June 2012, Tarragona, Spain

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