Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

Jiyoul Lee; A.J.J.M.  van Breemen; V. Khikhlovskyi; M. Kemerink; R.A.J. Janssen; Gerwin H. Gelinck

doi:10.1038/srep24407

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

Jiyoul Lee
, A.J.J.M. van Breemen
, V. Khikhlovskyi
, M. Kemerink
, R.A.J. Janssen
, Gerwin H. Gelinck

Research output: Contribution to journal › Article › Academic › peer-review

42 Citations (Scopus)

180 Downloads (Pure)

Abstract

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

Original language	English
Article number	24407
Pages (from-to)	1-7
Number of pages	7
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep24407
Publication status	Published - 15 Apr 2016

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abstract = "We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.",

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AU - Lee, Jiyoul

AU - van Breemen, A.J.J.M.

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AU - Kemerink, M.

AU - Janssen, R.A.J.

AU - Gelinck, Gerwin H.

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N2 - We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

AB - We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

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Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

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