Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

Jiyoul Lee, A.J.J.M. van Breemen, V. Khikhlovskyi, M. Kemerink, R.A.J. Janssen, Gerwin H. Gelinck

Research output: Contribution to journalArticleAcademicpeer-review

38 Citations (Scopus)
148 Downloads (Pure)


We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.
Original languageEnglish
Article number24407
Pages (from-to)1-7
Number of pages7
JournalScientific Reports
Publication statusPublished - 15 Apr 2016


Dive into the research topics of 'Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode'. Together they form a unique fingerprint.

Cite this