Pt-graphene contacts fabricated by plasma functionalization and atomic layer deposition

René H.J. Vervuurt, B. Karasulu, Nick F.W. Thissen, Yuqing Jiao, Jan Willem Weber, W.M.M. Kessels, Ageeth A. Bol

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

Pt-graphene contacts are fabricated by atomic layer deposition (ALD) on H2 and O2 plasma functionalized graphene. The plasma functionalization of graphene enables the growth of uniform Pt layers on graphene by ALD and improves the Pt-graphene interaction, which results in a reduced Pt-graphene contact resistance. Devices created using a H2 plasma treatment before Pt ALD perform considerably better than the ones created using O2 plasma treatments (Rc = 0.4 ± 0.2 kΩ μm and Rc = 1.2 ± 0.1 kΩ μm, respectively). The lower performance of the O2 plasma treatments is attributed to a less favorable Pt-graphene oxide interaction and the amorphization of graphene due to the O2 plasma interaction. Supporting the latter, density functional theory calculations indicate that the C-H groups created by a H2 plasma treatment leave the π-conjugation (by C-pz orbitals) of graphene largely intact, resulting in good in-plane and out-of-plane conductivity. The C-O groups formed by an O2 plasma treatment however disturb the C-pz character, deteriorating the in-plane conduction of graphene, despite the good out-of-plane conduction. The results indicate that the treatment of graphene by H2 plasma is a straightforward approach to improve the ALD growth on graphene and reduce the Pt-graphene contact resistance.

Original languageEnglish
Article number1800268
Number of pages15
JournalAdvanced Materials Interfaces
Volume5
Issue number13
DOIs
Publication statusPublished - 2 May 2018

Fingerprint

Atomic layer deposition
Graphene
Plasmas
Contact resistance
Plasma interactions
Amorphization
Density functional theory

Keywords

  • Atomic layer deposition
  • Devices
  • Graphene
  • Pt

Cite this

@article{fdd803107a6f415883dc095063ddb54d,
title = "Pt-graphene contacts fabricated by plasma functionalization and atomic layer deposition",
abstract = "Pt-graphene contacts are fabricated by atomic layer deposition (ALD) on H2 and O2 plasma functionalized graphene. The plasma functionalization of graphene enables the growth of uniform Pt layers on graphene by ALD and improves the Pt-graphene interaction, which results in a reduced Pt-graphene contact resistance. Devices created using a H2 plasma treatment before Pt ALD perform considerably better than the ones created using O2 plasma treatments (Rc = 0.4 ± 0.2 kΩ μm and Rc = 1.2 ± 0.1 kΩ μm, respectively). The lower performance of the O2 plasma treatments is attributed to a less favorable Pt-graphene oxide interaction and the amorphization of graphene due to the O2 plasma interaction. Supporting the latter, density functional theory calculations indicate that the C-H groups created by a H2 plasma treatment leave the π-conjugation (by C-pz orbitals) of graphene largely intact, resulting in good in-plane and out-of-plane conductivity. The C-O groups formed by an O2 plasma treatment however disturb the C-pz character, deteriorating the in-plane conduction of graphene, despite the good out-of-plane conduction. The results indicate that the treatment of graphene by H2 plasma is a straightforward approach to improve the ALD growth on graphene and reduce the Pt-graphene contact resistance.",
keywords = "Atomic layer deposition, Devices, Graphene, Pt",
author = "Vervuurt, {Ren{\'e} H.J.} and B. Karasulu and Thissen, {Nick F.W.} and Yuqing Jiao and Weber, {Jan Willem} and W.M.M. Kessels and Bol, {Ageeth A.}",
year = "2018",
month = "5",
day = "2",
doi = "10.1002/admi.201800268",
language = "English",
volume = "5",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "Wiley",
number = "13",

}

Pt-graphene contacts fabricated by plasma functionalization and atomic layer deposition. / Vervuurt, René H.J.; Karasulu, B.; Thissen, Nick F.W.; Jiao, Yuqing; Weber, Jan Willem; Kessels, W.M.M.; Bol, Ageeth A.

In: Advanced Materials Interfaces, Vol. 5, No. 13, 1800268, 02.05.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Pt-graphene contacts fabricated by plasma functionalization and atomic layer deposition

AU - Vervuurt, René H.J.

AU - Karasulu, B.

AU - Thissen, Nick F.W.

AU - Jiao, Yuqing

AU - Weber, Jan Willem

AU - Kessels, W.M.M.

AU - Bol, Ageeth A.

PY - 2018/5/2

Y1 - 2018/5/2

N2 - Pt-graphene contacts are fabricated by atomic layer deposition (ALD) on H2 and O2 plasma functionalized graphene. The plasma functionalization of graphene enables the growth of uniform Pt layers on graphene by ALD and improves the Pt-graphene interaction, which results in a reduced Pt-graphene contact resistance. Devices created using a H2 plasma treatment before Pt ALD perform considerably better than the ones created using O2 plasma treatments (Rc = 0.4 ± 0.2 kΩ μm and Rc = 1.2 ± 0.1 kΩ μm, respectively). The lower performance of the O2 plasma treatments is attributed to a less favorable Pt-graphene oxide interaction and the amorphization of graphene due to the O2 plasma interaction. Supporting the latter, density functional theory calculations indicate that the C-H groups created by a H2 plasma treatment leave the π-conjugation (by C-pz orbitals) of graphene largely intact, resulting in good in-plane and out-of-plane conductivity. The C-O groups formed by an O2 plasma treatment however disturb the C-pz character, deteriorating the in-plane conduction of graphene, despite the good out-of-plane conduction. The results indicate that the treatment of graphene by H2 plasma is a straightforward approach to improve the ALD growth on graphene and reduce the Pt-graphene contact resistance.

AB - Pt-graphene contacts are fabricated by atomic layer deposition (ALD) on H2 and O2 plasma functionalized graphene. The plasma functionalization of graphene enables the growth of uniform Pt layers on graphene by ALD and improves the Pt-graphene interaction, which results in a reduced Pt-graphene contact resistance. Devices created using a H2 plasma treatment before Pt ALD perform considerably better than the ones created using O2 plasma treatments (Rc = 0.4 ± 0.2 kΩ μm and Rc = 1.2 ± 0.1 kΩ μm, respectively). The lower performance of the O2 plasma treatments is attributed to a less favorable Pt-graphene oxide interaction and the amorphization of graphene due to the O2 plasma interaction. Supporting the latter, density functional theory calculations indicate that the C-H groups created by a H2 plasma treatment leave the π-conjugation (by C-pz orbitals) of graphene largely intact, resulting in good in-plane and out-of-plane conductivity. The C-O groups formed by an O2 plasma treatment however disturb the C-pz character, deteriorating the in-plane conduction of graphene, despite the good out-of-plane conduction. The results indicate that the treatment of graphene by H2 plasma is a straightforward approach to improve the ALD growth on graphene and reduce the Pt-graphene contact resistance.

KW - Atomic layer deposition

KW - Devices

KW - Graphene

KW - Pt

UR - http://www.scopus.com/inward/record.url?scp=85046248010&partnerID=8YFLogxK

U2 - 10.1002/admi.201800268

DO - 10.1002/admi.201800268

M3 - Article

AN - SCOPUS:85046248010

VL - 5

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 13

M1 - 1800268

ER -