PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

Lorenzo Ceccarelli; Francesco Iannuzzo; Muhammad Nawaz

doi:10.1109/ECCE.2016.7855369

PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

Lorenzo Ceccarelli
, Francesco Iannuzzo
, Muhammad Nawaz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

18 Citations (Scopus)

Abstract

The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

Original language	English
Title of host publication	2016 IEEE Energy Conversion Congress and Exposition (ECCE)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	8
ISBN (Electronic)	978-1-5090-0737-0
DOIs	https://doi.org/10.1109/ECCE.2016.7855369
Publication status	Published - 16 Feb 2017
Externally published	Yes
Event	8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States Duration: 18 Sept 2016 → 22 Sept 2016 Conference number: 8 http://www.ieee-ecce.org/2016

Conference

Conference	8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016
Abbreviated title	ECCE 2016
Country/Territory	United States
City	Milwaukee
Period	18/09/16 → 22/09/16
Internet address	http://www.ieee-ecce.org/2016

Keywords

Parameter extraction
PSpice modeling
SiC-MOSFETs
Wide bandgap devices

Access to Document

10.1109/ECCE.2016.7855369

Cite this

@inproceedings{617ab8605d004fa794c559355f4f3feb,

title = "PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation",

abstract = "The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.",

keywords = "Parameter extraction, PSpice modeling, SiC-MOSFETs, Wide bandgap devices",

author = "Lorenzo Ceccarelli and Francesco Iannuzzo and Muhammad Nawaz",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

year = "2017",

month = feb,

day = "16",

doi = "10.1109/ECCE.2016.7855369",

language = "English",

booktitle = "2016 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

url = "http://www.ieee-ecce.org/2016",

}

Ceccarelli, L, Iannuzzo, F & Nawaz, M 2017, PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation. in 2016 IEEE Energy Conversion Congress and Exposition (ECCE)., 7855369, Institute of Electrical and Electronics Engineers, 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, Wisconsin, United States, 18/09/16. https://doi.org/10.1109/ECCE.2016.7855369

PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation. / Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad.
2016 IEEE Energy Conversion Congress and Exposition (ECCE). Institute of Electrical and Electronics Engineers, 2017. 7855369.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Nawaz, Muhammad

N1 - Conference code: 8

PY - 2017/2/16

Y1 - 2017/2/16

N2 - The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

AB - The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

KW - Parameter extraction

KW - PSpice modeling

KW - SiC-MOSFETs

KW - Wide bandgap devices

UR - https://www.scopus.com/pages/publications/85015431640

U2 - 10.1109/ECCE.2016.7855369

DO - 10.1109/ECCE.2016.7855369

M3 - Conference contribution

AN - SCOPUS:85015431640

BT - 2016 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - Institute of Electrical and Electronics Engineers

T2 - 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016

Y2 - 18 September 2016 through 22 September 2016

ER -

PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this