Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Adane K. Geremew, Fariborz Kargar, E. Zhang, S. Zhao, E. Aytan, Matthew Bloodgood, Tina T. Salguero, Sergey Rumyantsev, A. Fedoseyev, Dan Fleetwood, Alexander A. Balandin (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

We demonstrate that charge-density-wave devices with quasi-two-dimensional 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 1014 H+cm−2. The current–voltage characteristics of these devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other two-dimensional devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these “all-metallic” charge-density-wave devices is attributed to the quasi-2D nature of the electron transport in the nanoscale-thickness channel, high concentration of charge carriers in the utilized charge-density-wave phases, and two-dimensional device design. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
Original languageEnglish
Pages (from-to)8380-8386
Number of pages7
JournalNanoscale
Volume11
Issue number17
DOIs
Publication statusPublished - 7 May 2019
Externally publishedYes

Fingerprint Dive into the research topics of 'Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices'. Together they form a unique fingerprint.

  • Cite this

    Geremew, A. K., Kargar, F., Zhang, E., Zhao, S., Aytan, E., Bloodgood, M., Salguero, T. T., Rumyantsev, S., Fedoseyev, A., Fleetwood, D., & Balandin, A. A. (2019). Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices. Nanoscale, 11(17), 8380-8386. https://doi.org/10.1039/c9nr01614g