Progress in reactive ion etching of epitaxial GaN

F. Karouta, P. Vreugdewater, B. Jacobs, B.H. Roy, van, O. Schön, H. Protzmann, M. Heuken

Research output: Non-textual formSoftwareOther research output

LanguageEnglish
PublisherTechnische Universiteit Eindhoven
StatePublished - 1998

Cite this

Karouta, F. (Author), Vreugdewater, P. (Author), Jacobs, B. (Author), Roy, van, B. H. (Author), Schön, O. (Author), Protzmann, H. (Author), & Heuken, M. (Author). (1998). Progress in reactive ion etching of epitaxial GaN. Software, Technische Universiteit Eindhoven.
Karouta, F. (Author) ; Vreugdewater, P. (Author) ; Jacobs, B. (Author) ; Roy, van, B.H. (Author) ; Schön, O. (Author) ; Protzmann, H. (Author) ; Heuken, M. (Author). / Progress in reactive ion etching of epitaxial GaN. [Software].
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title = "Progress in reactive ion etching of epitaxial GaN",
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year = "1998",
language = "English",
publisher = "Technische Universiteit Eindhoven",

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Karouta, F, Vreugdewater, P, Jacobs, B, Roy, van, BH, Schön, O, Protzmann, H & Heuken, M, Progress in reactive ion etching of epitaxial GaN, 1998, Software, Technische Universiteit Eindhoven.
Progress in reactive ion etching of epitaxial GaN.. Karouta, F. (Author); Vreugdewater, P. (Author); Jacobs, B. (Author); Roy, van, B.H. (Author); Schön, O. (Author); Protzmann, H. (Author); Heuken, M. (Author). 1998. Technische Universiteit Eindhoven. .

Research output: Non-textual formSoftwareOther research output

TY - ADVS

T1 - Progress in reactive ion etching of epitaxial GaN

AU - Karouta,F.

AU - Vreugdewater,P.

AU - Jacobs,B.

AU - Roy, van,B.H.

AU - Schön,O.

AU - Protzmann,H.

AU - Heuken,M.

PY - 1998

Y1 - 1998

M3 - Software

PB - Technische Universiteit Eindhoven

ER -

Karouta F (Author), Vreugdewater P (Author), Jacobs B (Author), Roy, van BH (Author), Schön O (Author), Protzmann H (Author) et al. Progress in reactive ion etching of epitaxial GaN Technische Universiteit Eindhoven. 1998.