TY - JOUR
T1 - Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?
AU - Ishikawa, K.
AU - Karahashi, K.
AU - Ichiki, T.
AU - Chang, J.P.
AU - George, S.M.
AU - Kessels, W.M.M.
AU - Lee, H.J.
AU - Tinck, S.
AU - Um, J.H.
AU - Kinoshita, K.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.
AB - In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.
UR - http://www.scopus.com/inward/record.url?scp=85020914361&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.06HA02
DO - 10.7567/JJAP.56.06HA02
M3 - Article
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6S2
M1 - 06HA02
ER -