Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

X. Li, A.J.J.M. Breemen, van, V. Khikhlovskyi, E.C.P. Smits, M. Kemerink, D.J. Broer, G.H. Gelinck

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Abstract

We present a voltage programmable polymer light emitting field-effect transistor (LEFET), consisting of a green emitting polymer (F8BT), and a ferroelectric polymer, P(VDF-TrFE), as the gate dielectric. We show by both experimental observations and numerical modeling that, when the ferroelectric gate dielectric is polarized in opposite directions at the drain and source sides of the channel, respectively, both electron and hole currents are enhanced, resulting in more charge recombination and ~10 times higher light emission in a ferroelectric LEFET, compared to the device with non-ferroelectric gate. As a result of the ferroelectric poling, our ferroelectric LEFETs exhibit repeated programmability in light emission, and an external quantum efficiency (EQE) of up to 1.06%. Numerical modeling reveals that the remnant polarization charge of the ferroelectric layer tends to ‘pin’ the position of the recombination zone, paving the way to integrate specific optical out-coupling structures in the channel of these devices to further increase the brightness.
Original languageEnglish
Pages (from-to)1742-1749
Number of pages8
JournalOrganic Electronics
Volume13
Issue number9
DOIs
Publication statusPublished - 2012

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Light emission
Ferroelectric materials
light emission
Polymers
Transistors
transistors
Polarization
polymers
polarization
field effect transistors
Gate dielectrics
Field effect transistors
quantum efficiency
brightness
electric potential
Quantum efficiency
Luminance
electrons
Electrons
Electric potential

Cite this

Li, X. ; Breemen, van, A.J.J.M. ; Khikhlovskyi, V. ; Smits, E.C.P. ; Kemerink, M. ; Broer, D.J. ; Gelinck, G.H. / Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission. In: Organic Electronics. 2012 ; Vol. 13, No. 9. pp. 1742-1749.
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title = "Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission",
abstract = "We present a voltage programmable polymer light emitting field-effect transistor (LEFET), consisting of a green emitting polymer (F8BT), and a ferroelectric polymer, P(VDF-TrFE), as the gate dielectric. We show by both experimental observations and numerical modeling that, when the ferroelectric gate dielectric is polarized in opposite directions at the drain and source sides of the channel, respectively, both electron and hole currents are enhanced, resulting in more charge recombination and ~10 times higher light emission in a ferroelectric LEFET, compared to the device with non-ferroelectric gate. As a result of the ferroelectric poling, our ferroelectric LEFETs exhibit repeated programmability in light emission, and an external quantum efficiency (EQE) of up to 1.06{\%}. Numerical modeling reveals that the remnant polarization charge of the ferroelectric layer tends to ‘pin’ the position of the recombination zone, paving the way to integrate specific optical out-coupling structures in the channel of these devices to further increase the brightness.",
author = "X. Li and {Breemen, van}, A.J.J.M. and V. Khikhlovskyi and E.C.P. Smits and M. Kemerink and D.J. Broer and G.H. Gelinck",
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Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission. / Li, X.; Breemen, van, A.J.J.M.; Khikhlovskyi, V.; Smits, E.C.P.; Kemerink, M.; Broer, D.J.; Gelinck, G.H.

In: Organic Electronics, Vol. 13, No. 9, 2012, p. 1742-1749.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Programmable polymer light emitting transistors with ferroelectric polarization-enhanced channel current and light emission

AU - Li, X.

AU - Breemen, van, A.J.J.M.

AU - Khikhlovskyi, V.

AU - Smits, E.C.P.

AU - Kemerink, M.

AU - Broer, D.J.

AU - Gelinck, G.H.

PY - 2012

Y1 - 2012

N2 - We present a voltage programmable polymer light emitting field-effect transistor (LEFET), consisting of a green emitting polymer (F8BT), and a ferroelectric polymer, P(VDF-TrFE), as the gate dielectric. We show by both experimental observations and numerical modeling that, when the ferroelectric gate dielectric is polarized in opposite directions at the drain and source sides of the channel, respectively, both electron and hole currents are enhanced, resulting in more charge recombination and ~10 times higher light emission in a ferroelectric LEFET, compared to the device with non-ferroelectric gate. As a result of the ferroelectric poling, our ferroelectric LEFETs exhibit repeated programmability in light emission, and an external quantum efficiency (EQE) of up to 1.06%. Numerical modeling reveals that the remnant polarization charge of the ferroelectric layer tends to ‘pin’ the position of the recombination zone, paving the way to integrate specific optical out-coupling structures in the channel of these devices to further increase the brightness.

AB - We present a voltage programmable polymer light emitting field-effect transistor (LEFET), consisting of a green emitting polymer (F8BT), and a ferroelectric polymer, P(VDF-TrFE), as the gate dielectric. We show by both experimental observations and numerical modeling that, when the ferroelectric gate dielectric is polarized in opposite directions at the drain and source sides of the channel, respectively, both electron and hole currents are enhanced, resulting in more charge recombination and ~10 times higher light emission in a ferroelectric LEFET, compared to the device with non-ferroelectric gate. As a result of the ferroelectric poling, our ferroelectric LEFETs exhibit repeated programmability in light emission, and an external quantum efficiency (EQE) of up to 1.06%. Numerical modeling reveals that the remnant polarization charge of the ferroelectric layer tends to ‘pin’ the position of the recombination zone, paving the way to integrate specific optical out-coupling structures in the channel of these devices to further increase the brightness.

U2 - 10.1016/j.orgel.2012.05.021

DO - 10.1016/j.orgel.2012.05.021

M3 - Article

VL - 13

SP - 1742

EP - 1749

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 9

ER -