Processing of intra-cavity VCSELs in structures with doped DBRs

L.M. Augustin; R.C. Strijbos; E. Smalbrugge; K. Choquette; G. Verschaffelt; E.J. Geluk; F. Karouta; T.G. Roer, van de

Processing of intra-cavity VCSELs in structures with doped DBRs

L.M. Augustin
, R.C. Strijbos
, E. Smalbrugge
, K. Choquette
, G. Verschaffelt
, E.J. Geluk
, F. Karouta
, T.G. Roer, van de

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.

Original language	English
Title of host publication	Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
Editors	F. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of Publication	Brussels, Belgium
Publisher	IEEE/LEOS
Pages	113-117
ISBN (Print)	90-5487247-0
Publication status	Published - 2001
Event	6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium Duration: 3 Dec 2001 → 3 Dec 2001 Conference number: 6

Conference

Conference	6th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country/Territory	Belgium
City	Brussels
Period	3/12/01 → 3/12/01

Cite this

Augustin, L. M., Strijbos, R. C., Smalbrugge, E., Choquette, K., Verschaffelt, G., Geluk, E. J., Karouta, F., & Roer, van de, T. G. (2001). Processing of intra-cavity VCSELs in structures with doped DBRs. In F. Berghmans, H. Thienpont, J. Danckaert, & L. Desmet (Eds.), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium (pp. 113-117). IEEE/LEOS.

@inproceedings{d59a009b40bb4388be9fa0d3dd4226a0,

title = "Processing of intra-cavity VCSELs in structures with doped DBRs",

abstract = "Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.",

author = "L.M. Augustin and R.C. Strijbos and E. Smalbrugge and K. Choquette and G. Verschaffelt and E.J. Geluk and F. Karouta and \{Roer, van de\}, T.G.",

year = "2001",

language = "English",

isbn = "90-5487247-0",

pages = "113--117",

editor = "F. Berghmans and H. Thienpont and J. Danckaert and L. Desmet",

booktitle = "Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium",

publisher = "IEEE/LEOS",

note = "6th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 03-12-2001 Through 03-12-2001",

}

Augustin, LM, Strijbos, RC, Smalbrugge, E, Choquette, K, Verschaffelt, G, Geluk, EJ, Karouta, F & Roer, van de, TG 2001, Processing of intra-cavity VCSELs in structures with doped DBRs. in F Berghmans, H Thienpont, J Danckaert & L Desmet (eds), Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. IEEE/LEOS, Brussels, Belgium, pp. 113-117, 6th Annual Symposium of the IEEE/LEOS Benelux Chapter, Brussels, Belgium, 3/12/01.

Processing of intra-cavity VCSELs in structures with doped DBRs. / Augustin, L.M.; Strijbos, R.C.; Smalbrugge, E. et al.
Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium. ed. / F. Berghmans; H. Thienpont; J. Danckaert; L. Desmet. Brussels, Belgium: IEEE/LEOS, 2001. p. 113-117.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Processing of intra-cavity VCSELs in structures with doped DBRs

AU - Augustin, L.M.

AU - Strijbos, R.C.

AU - Smalbrugge, E.

AU - Choquette, K.

AU - Verschaffelt, G.

AU - Geluk, E.J.

AU - Karouta, F.

AU - Roer, van de, T.G.

N1 - Conference code: 6

PY - 2001

Y1 - 2001

N2 - Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.

AB - Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.

M3 - Conference contribution

SN - 90-5487247-0

SP - 113

EP - 117

BT - Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium

A2 - Berghmans, F.

A2 - Thienpont, H.

A2 - Danckaert, J.

A2 - Desmet, L.

PB - IEEE/LEOS

CY - Brussels, Belgium

T2 - 6th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 3 December 2001 through 3 December 2001

ER -

Processing of intra-cavity VCSELs in structures with doped DBRs

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