Processing of intra-cavity VCSELs in structures with doped DBRs

L.M. Augustin, R.C. Strijbos, E. Smalbrugge, K. Choquette, G. Verschaffelt, E.J. Geluk, F. Karouta, T.G. Roer, van de

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Abstract

Standard GaAs-based VCSEL structures with doped DBR mirrors are processed into intra-cavity contacted VCSELs with asymmetric current injection to investigate their polarisation behaviour. The processing requires reflectometry measurements during etching of the first and second mesa. The p- and n-contacts are deposited on an AlGaAs layer with the lowest Al-content of the upper and bottom DBR respectively. A dichromate solution was used to etch selectively the higher Al-content layer of the DBRs before depositing the contacts.
Original languageEnglish
Title of host publicationProceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium
EditorsF. Berghmans, H. Thienpont, J. Danckaert, L. Desmet
Place of PublicationBrussels, Belgium
PublisherIEEE/LEOS
Pages113-117
ISBN (Print)90-5487247-0
Publication statusPublished - 2001
Event6th Annual Symposium of the IEEE/LEOS Benelux Chapter - Brussels, Belgium
Duration: 3 Dec 20013 Dec 2001
Conference number: 6

Conference

Conference6th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country/TerritoryBelgium
CityBrussels
Period3/12/013/12/01

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