Abstract
The high vertical index contrast and the small thickness of IMOS allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration is an essential step towards complete PICs. In this paper we will present our results on the analysis of submicron active-passive integration for IMOS platform. A trap model based on rate equations is built up to evaluate degradation of InGaAsP QWs due to the clean room processing, especially from the dry etching. The results show that the model fits quite well with the experimental data and that defect densities increase strongly for smaller active regions.
| Original language | English |
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| Title of host publication | Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 Novembre 2012, Mons, Belgium |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 135-138 |
| Publication status | Published - 2012 |
| Event | 17th Annual Symposium of the IEEE Photonics Benelux Chapter - Mons, Belgium Duration: 29 Nov 2012 → 30 Nov 2012 Conference number: 17 http://www.telecom.fpms.ac.be/IPS_symposium2012/ |
Conference
| Conference | 17th Annual Symposium of the IEEE Photonics Benelux Chapter |
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| Country/Territory | Belgium |
| City | Mons |
| Period | 29/11/12 → 30/11/12 |
| Internet address |