Abstract
The present invention provides a silicon nitride thin film formation apparatus for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties are adequate for application as a antireflection layer or passivation layer in solar cell devices or as dielectric layer in thin film transistors. The apparatus comprises a number of metal filaments. In the space within the formation apparatus opposite to the substrate with respect to the filaments, a gas dosage system is arranged at a predetermined distance of the filaments. The film formation apparatus for stationary substrates also contains a shutter to control the starting and ending conditions for film formation and to control the film thickness.
| Original language | English |
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| Patent number | EP1574597 |
| IPC | H01L 21/ 318 A I |
| Priority date | 30/06/04 |
| Publication status | Published - 14 Sept 2005 |
| Externally published | Yes |