The present invention provides a silicon nitride thin film formation apparatus for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties are adequate for application as a antireflection layer or passivation layer in solar cell devices or as dielectric layer in thin film transistors. The apparatus comprises a number of metal filaments. In the space within the formation apparatus opposite to the substrate with respect to the filaments, a gas dosage system is arranged at a predetermined distance of the filaments. The film formation apparatus for stationary substrates also contains a shutter to control the starting and ending conditions for film formation and to control the film thickness.
|IPC||H01L 21/ 318 A I|
|Publication status||Published - 14 Sep 2005|