Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

E.A.G. Hamers; A.H.M. Smets; M.C.M. Sanden, van de; D.C. Schram

Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

E.A.G. Hamers (Inventor), A.H.M. Smets (Inventor), M.C.M. Sanden, van de (Inventor), D.C. Schram (Inventor)

Plasma & Materials Processing

Research output: Patent › Patent publication

Abstract

In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

Original language	English
Patent number	WO2002083979
Publication status	Published - 24 Oct 2002

Cite this

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title = "Process and device for the deposition of an at least partially crystalline silicium layer on a substrate",

abstract = "In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.",

author = "E.A.G. Hamers and A.H.M. Smets and {Sanden, van de}, M.C.M. and D.C. Schram",

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T1 - Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

AU - Hamers, E.A.G.

AU - Smets, A.H.M.

AU - Sanden, van de, M.C.M.

AU - Schram, D.C.

PY - 2002/10/24

Y1 - 2002/10/24

N2 - In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

AB - In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.

UR - http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&adjacent=true&locale=nl_nl&FT=D&date=20021024&CC=WO&NR=02083979A2&KC=A2

M3 - Patent publication

M1 - WO2002083979

ER -

Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

Abstract

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