Process and device for the deposition of a microcrystalline silicon layer on a substrate

E.A.G. Hamers (Inventor), A.H.M. Smets (Inventor), M.C.M. Sanden, van de (Inventor), D.C. Schram (Inventor)

Research output: PatentPatent publication

Abstract

No abstract for EP 1381710 Abstract looks like WO 02083979 In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
Original languageEnglish
Patent numberEP1381710
Publication statusPublished - 21 Apr 2004

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