Probing the phase composition of silicon films in situ by etch product detection

G. Dingemans; M.N. van den Donker; A. Gordijn; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1063/1.2799738

Probing the phase composition of silicon films in situ by etch product detection

G. Dingemans, M.N. van den Donker, A. Gordijn, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

Original language	English
Article number	161902
Pages (from-to)	161902-1/3
Journal	Applied Physics Letters
Volume	91
Issue number	16
DOIs	https://doi.org/10.1063/1.2799738
Publication status	Published - 2007

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title = "Probing the phase composition of silicon films in situ by etch product detection",

abstract = "Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis",

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AU - Sanden, van de, M.C.M.

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AB - Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

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Probing the phase composition of silicon films in situ by etch product detection

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