Probing the phase composition of silicon films in situ by etch product detection

G. Dingemans, M.N. van den Donker, A. Gordijn, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis
Original languageEnglish
Article number161902
Pages (from-to)161902-1/3
JournalApplied Physics Letters
Volume91
Issue number16
DOIs
Publication statusPublished - 2007

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