Probing the local electronic structure of isovalent Bi atoms in InP

C.M. Krammel, A.R. Da Cruz, M.E. Flatté, M. Roy, P.A. Maksym, L.Y. Zhang, K. Wang, Y.Y. Li, S.M. Wang, P.M. Koenraad

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Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled-state X-STM images on the natural {110} cleavage planes. The Bi impurity state has a highly anisotropic bowtielike structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the 110 directions, which define the bowtielike structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge toward higher energies. Furthermore, we show that the energetic position of the Bi-induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.

Original languageEnglish
Article number024113
JournalPhysical Review B
Issue number2
Publication statusPublished - 31 Jan 2020


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