Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008

F. Roozeboom; C.A. Bower; P.E. Garrou; M. Koyanagi; P. Ramm

Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008

F. Roozeboom
, C.A. Bower
, P.E. Garrou
, M. Koyanagi
, P. Ramm

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Foreword/editorial › Academic

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Abstract

3-dimensional integration (3D IC) is a system level architecture/technology wherein multiple layers of planar devices are stacked and vertically interconnected through the silicon substrate (or other semiconductor material) in the Z direction as shown in Figure 1.

Original language	English
Title of host publication	Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A
Place of Publication	Pennington (NJ), USA
Publisher	Electrochemical Society, Inc.
Pages	XI-XII
ISBN (Print)	978-1-605-11084-4
Publication status	Published - 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1112
ISSN (Print)	0272-9172

Cite this

Roozeboom, F., Bower, C. A., Garrou, P. E., Koyanagi, M., & Ramm, P. (2009). Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008. In Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A (pp. XI-XII). (Materials Research Society Symposium Proceedings; Vol. 1112). Electrochemical Society, Inc..

Roozeboom, F. ; Bower, C.A. ; Garrou, P.E. et al. / Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008. Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A. Pennington (NJ), USA : Electrochemical Society, Inc., 2009. pp. XI-XII (Materials Research Society Symposium Proceedings).

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title = "Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008",

abstract = "3-dimensional integration (3D IC) is a system level architecture/technology wherein multiple layers of planar devices are stacked and vertically interconnected through the silicon substrate (or other semiconductor material) in the Z direction as shown in Figure 1.",

author = "F. Roozeboom and C.A. Bower and P.E. Garrou and M. Koyanagi and P. Ramm",

year = "2009",

language = "English",

isbn = "978-1-605-11084-4",

series = "Materials Research Society Symposium Proceedings",

publisher = "Electrochemical Society, Inc.",

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Roozeboom, F, Bower, CA, Garrou, PE, Koyanagi, M & Ramm, P 2009, Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008. in Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A. Materials Research Society Symposium Proceedings, vol. 1112, Electrochemical Society, Inc., Pennington (NJ), USA, pp. XI-XII.

Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008. / Roozeboom, F.; Bower, C.A.; Garrou, P.E. et al.
Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A. Pennington (NJ), USA: Electrochemical Society, Inc., 2009. p. XI-XII (Materials Research Society Symposium Proceedings; Vol. 1112).

Research output: Chapter in Book/Report/Conference proceeding › Foreword/editorial › Academic

TY - CHAP

T1 - Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008

AU - Roozeboom, F.

AU - Bower, C.A.

AU - Garrou, P.E.

AU - Koyanagi, M.

AU - Ramm, P.

PY - 2009

Y1 - 2009

N2 - 3-dimensional integration (3D IC) is a system level architecture/technology wherein multiple layers of planar devices are stacked and vertically interconnected through the silicon substrate (or other semiconductor material) in the Z direction as shown in Figure 1.

AB - 3-dimensional integration (3D IC) is a system level architecture/technology wherein multiple layers of planar devices are stacked and vertically interconnected through the silicon substrate (or other semiconductor material) in the Z direction as shown in Figure 1.

M3 - Foreword/editorial

SN - 978-1-605-11084-4

T3 - Materials Research Society Symposium Proceedings

SP - XI-XII

BT - Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A

PB - Electrochemical Society, Inc.

CY - Pennington (NJ), USA

ER -

Roozeboom F, Bower CA, Garrou PE, Koyanagi M, Ramm P. Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008. In Materials and technologies for 3-D integration : symposium held December 1-3, 2008, Boston, Massachusetts, U.S.A. Pennington (NJ), USA: Electrochemical Society, Inc. 2009. p. XI-XII. (Materials Research Society Symposium Proceedings).

Preface : Materials and Technologies for 3-D Integration - 2008 MRS Fall Meeting; Boston, MA; 1 December 2008 through 3 December 2008

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