Preface : Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

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@article{5806fb8d9c1a4bae92874e91224a63a6,

title = "Preface : Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment",

author = "P.J. Timans and D.-L. Kwong and H. Iwai and E.P. Gusev and F. Roozeboom and M. {\"O}zt{\"u}rk",

year = "2008",

language = "English",

volume = "13",

pages = "III--",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "1",

}

TY - JOUR

T1 - Preface : Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

AU - Timans, P.J.

AU - Kwong, D.-L.

AU - Iwai, H.

AU - Gusev, E.P.

AU - Roozeboom, F.

AU - Öztürk, M.

PY - 2008

Y1 - 2008

M3 - Editorial

SN - 1938-5862

VL - 13

SP - III-

JO - ECS Transactions

JF - ECS Transactions

IS - 1

ER -