Preface: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

P.J. Timans; D.L. Kwong; H. Iwai; E.P. Gusev; F. Roozeboom; M. Öztürk

Preface: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

P.J. Timans, D.L. Kwong, H. Iwai, E.P. Gusev, F. Roozeboom, M. Öztürk

Plasma & Materials Processing

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Original language	English
Pages (from-to)	iii
Number of pages	1
Journal	ECS Transactions
Volume	13
Issue number	1
Publication status	Published - 13 Nov 2008
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States Duration: 18 May 2008 → 22 May 2008

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title = "Preface: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment ",

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AU - Kwong, D.L.

AU - Iwai, H.

AU - Gusev, E.P.

AU - Roozeboom, F.

AU - Öztürk, M.

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Y2 - 18 May 2008 through 22 May 2008

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Preface: Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

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