Precise shape engineering of epitaxial quantum dots by growth kinetics

S. Bietti, J. Bocquel, S. Adorno, T. Mano, J.G. Keizer, P.M. Koenraad, S. Sanguinetti

Research output: Contribution to journalArticleAcademicpeer-review

28 Citations (Scopus)
141 Downloads (Pure)

Abstract

We show that independent size and morphology engineering of epitaxial quantum dots can be obtained using a kinetically controlled quantum dot fabrication procedure, namely droplet epitaxy.Due to the far-from-equilibrium droplet epitaxy procedure, which is based on the crystallization, under As flux, of a nanometric droplet of Ga, independent and precise tuning of quantum dot size, aspect ratio, and faceting can be achieved. The dependence of the dot morphology on the growth conditions is interpreted and described quantitatively through a model that takes into account the crystallization kinetics of the Ga stored in the droplet under As flux.
Original languageEnglish
Pages (from-to)075425-1/8
Number of pages8
JournalPhysical Review B
Volume92
Issue number7
DOIs
Publication statusPublished - 19 Aug 2015

Fingerprint Dive into the research topics of 'Precise shape engineering of epitaxial quantum dots by growth kinetics'. Together they form a unique fingerprint.

Cite this