Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors

Chen Xu; Lei Lin; Kai Hu

doi:10.1109/WiPDAAsia.2018.8734551

Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors

Chen Xu
, Lei Lin
, Kai Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

This paper presents a novel modular multilevel converter (MMC) whose sub-module (SM) is of semi-full bridge structure with SiC-MOSFET switched capacitors. Compared with conventional half-and full-bridge (H FB) hybrid MMC, the proposed capacitor-switching semi-full-bridge (CS-SFB) MMC has the same DC fault ride through capability due to the unchanged positive and negative output voltage levels. The CS-SFB MMC not only possesses the sub-module consistency characteristic similarly as SFB SM, but also it has low power loss characteristic on account of CS technique. The currents of some Si-IGBTs and SiC-MOSFETs are half of the arm current, thus the conduction loss is reduced. Combined with the fast recovery characteristic of SiC-diodes, the switching loss can be reduced simultaneously. The calculation and simulation results based on the verification model show that CS-SFB MMC has better conduction and switching loss characteristic compared with CS-H FB MMC, SFB MMC and H FB MMC.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA)
Publisher	Institute of Electrical and Electronics Engineers
Pages	45-54
Number of pages	10
ISBN (Electronic)	978-1-5386-4392-1
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734551
Publication status	Published - May 2018
Externally published	Yes
Event	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China Duration: 16 May 2018 → 18 May 2018

Conference

Conference	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18

Funding

This work was supported by China Postdoctoral Science Foundation (2017M610476) and in part by the National Natural Science Foundation of China under Grant 51677077. ACKNOWLEDGEMENTS This work was supported by China Postdoctoral Science Foundation (2017M610476) and in part by the National Natural Science Foundation of China under Grant 51677077.

Keywords

capacitor-switching semi-full-bridge sub-module
modular multilevel converter
power loss

Access to Document

10.1109/WiPDAAsia.2018.8734551

Cite this

Xu, C., Lin, L., & Hu, K. (2018). Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA) (pp. 45-54). Article 8734551 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WiPDAAsia.2018.8734551

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title = "Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors",

abstract = "This paper presents a novel modular multilevel converter (MMC) whose sub-module (SM) is of semi-full bridge structure with SiC-MOSFET switched capacitors. Compared with conventional half-and full-bridge (H FB) hybrid MMC, the proposed capacitor-switching semi-full-bridge (CS-SFB) MMC has the same DC fault ride through capability due to the unchanged positive and negative output voltage levels. The CS-SFB MMC not only possesses the sub-module consistency characteristic similarly as SFB SM, but also it has low power loss characteristic on account of CS technique. The currents of some Si-IGBTs and SiC-MOSFETs are half of the arm current, thus the conduction loss is reduced. Combined with the fast recovery characteristic of SiC-diodes, the switching loss can be reduced simultaneously. The calculation and simulation results based on the verification model show that CS-SFB MMC has better conduction and switching loss characteristic compared with CS-H FB MMC, SFB MMC and H FB MMC.",

keywords = "capacitor-switching semi-full-bridge sub-module, modular multilevel converter, power loss",

author = "Chen Xu and Lei Lin and Kai Hu",

year = "2018",

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doi = "10.1109/WiPDAAsia.2018.8734551",

language = "English",

pages = "45--54",

booktitle = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA)",

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Xu, C, Lin, L & Hu, K 2018, Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA)., 8734551, Institute of Electrical and Electronics Engineers, pp. 45-54, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734551

Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors. / Xu, Chen; Lin, Lei; Hu, Kai.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA). Institute of Electrical and Electronics Engineers, 2018. p. 45-54 8734551.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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PY - 2018/5

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N2 - This paper presents a novel modular multilevel converter (MMC) whose sub-module (SM) is of semi-full bridge structure with SiC-MOSFET switched capacitors. Compared with conventional half-and full-bridge (H FB) hybrid MMC, the proposed capacitor-switching semi-full-bridge (CS-SFB) MMC has the same DC fault ride through capability due to the unchanged positive and negative output voltage levels. The CS-SFB MMC not only possesses the sub-module consistency characteristic similarly as SFB SM, but also it has low power loss characteristic on account of CS technique. The currents of some Si-IGBTs and SiC-MOSFETs are half of the arm current, thus the conduction loss is reduced. Combined with the fast recovery characteristic of SiC-diodes, the switching loss can be reduced simultaneously. The calculation and simulation results based on the verification model show that CS-SFB MMC has better conduction and switching loss characteristic compared with CS-H FB MMC, SFB MMC and H FB MMC.

AB - This paper presents a novel modular multilevel converter (MMC) whose sub-module (SM) is of semi-full bridge structure with SiC-MOSFET switched capacitors. Compared with conventional half-and full-bridge (H FB) hybrid MMC, the proposed capacitor-switching semi-full-bridge (CS-SFB) MMC has the same DC fault ride through capability due to the unchanged positive and negative output voltage levels. The CS-SFB MMC not only possesses the sub-module consistency characteristic similarly as SFB SM, but also it has low power loss characteristic on account of CS technique. The currents of some Si-IGBTs and SiC-MOSFETs are half of the arm current, thus the conduction loss is reduced. Combined with the fast recovery characteristic of SiC-diodes, the switching loss can be reduced simultaneously. The calculation and simulation results based on the verification model show that CS-SFB MMC has better conduction and switching loss characteristic compared with CS-H FB MMC, SFB MMC and H FB MMC.

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ER -

Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors

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Keywords

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