Abstract
This paper presents a novel modular multilevel converter (MMC) whose sub-module (SM) is of semi-full bridge structure with SiC-MOSFET switched capacitors. Compared with conventional half-and full-bridge (H FB) hybrid MMC, the proposed capacitor-switching semi-full-bridge (CS-SFB) MMC has the same DC fault ride through capability due to the unchanged positive and negative output voltage levels. The CS-SFB MMC not only possesses the sub-module consistency characteristic similarly as SFB SM, but also it has low power loss characteristic on account of CS technique. The currents of some Si-IGBTs and SiC-MOSFETs are half of the arm current, thus the conduction loss is reduced. Combined with the fast recovery characteristic of SiC-diodes, the switching loss can be reduced simultaneously. The calculation and simulation results based on the verification model show that CS-SFB MMC has better conduction and switching loss characteristic compared with CS-H FB MMC, SFB MMC and H FB MMC.
Original language | English |
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Title of host publication | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA) |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 45-54 |
Number of pages | 10 |
ISBN (Electronic) | 978-1-5386-4392-1 |
DOIs | |
Publication status | Published - May 2018 |
Externally published | Yes |
Event | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China Duration: 16 May 2018 → 18 May 2018 |
Conference
Conference | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
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Country/Territory | China |
City | Xi'an |
Period | 16/05/18 → 18/05/18 |
Keywords
- capacitor-switching semi-full-bridge sub-module
- modular multilevel converter
- power loss