Power and Variation Improved Near-Vt Standard Cell Library for 28-nm FDSOI

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Abstract

In this work, a new library is developed for 28-nm FDSOI CMOS technology. The new library is optimized for near-threshold operating voltage of 0.4V by balancing the pull-up/ pull-down networks (PUN/PDN) of logic gates, focusing on device sizing and exploiting poly-biasing feature. With the new library, up to 38% of leakage power consumption savings and up to 9% of dynamic power consumption savings are achieved for a variety of ITC benchmark circuits and an ARM Cortex-M0 as compared to the existing library. Combining the newly developed library with the existing libraries reduces the power consumption even more without any performance and area penalty. Monte Carlo simulations on the critical path delay of the ARM Cortex- M0 shows that the mean and standard deviation decreased by up to 8% and 22%, respectively, improving speed and robustness.

Original languageEnglish
Title of host publication2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Electronic)9781728135236
DOIs
Publication statusPublished - 14 Oct 2019
Event2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 - San Jose, United States
Duration: 14 Oct 201917 Oct 2019

Conference

Conference2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
CountryUnited States
CitySan Jose
Period14/10/1917/10/19

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