Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

A. Fiore; Y.A. Akulova; J. Ko; E.R. Hegblom; L.A. Coldren

doi:10.1109/3.753667

Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

A. Fiore, Y.A. Akulova, J. Ko, E.R. Hegblom, L.A. Coldren

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

1 Downloads (Pure)

Abstract

Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]

Original language	English
Pages (from-to)	616-623
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	35
Issue number	4
DOIs	https://doi.org/10.1109/3.753667
Publication status	Published - 1999

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Fiore, A., Akulova, Y. A., Ko, J., Hegblom, E. R., & Coldren, L. A. (1999). Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays. IEEE Journal of Quantum Electronics, 35(4), 616-623. https://doi.org/10.1109/3.753667

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abstract = "Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]",

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AU - Fiore, A.

AU - Akulova, Y.A.

AU - Ko, J.

AU - Hegblom, E.R.

AU - Coldren, L.A.

PY - 1999

Y1 - 1999

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AB - Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]

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