Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

A. Fiore; Y.A. Akulova; J. Ko; E.R. Hegblom; L.A. Coldren

doi:10.1109/3.753667

Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

A. Fiore, Y.A. Akulova, J. Ko, E.R. Hegblom, L.A. Coldren

Photonics and Semiconductor Nanophysics

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Abstract

Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]

Original language	English
Pages (from-to)	616-623
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	35
Issue number	4
DOIs	https://doi.org/10.1109/3.753667
Publication status	Published - 1999

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title = "Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays",

abstract = "Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]",

author = "A. Fiore and Y.A. Akulova and J. Ko and E.R. Hegblom and L.A. Coldren",

year = "1999",

doi = "10.1109/3.753667",

language = "English",

volume = "35",

pages = "616--623",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers",

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T1 - Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

AU - Fiore, A.

AU - Akulova, Y.A.

AU - Ko, J.

AU - Hegblom, E.R.

AU - Coldren, L.A.

PY - 1999

Y1 - 1999

N2 - Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]

AB - Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]

U2 - 10.1109/3.753667

DO - 10.1109/3.753667

M3 - Article

VL - 35

SP - 616

EP - 623

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

ER -

Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

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