Abstract
Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)]
Original language | English |
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Pages (from-to) | 616-623 |
Number of pages | 8 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 35 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1999 |