Post-transit analysis of transient photocurrents from high-deposition-rate a-Si:H samples

M. Brinza, W.M.M. Kessels, A.H.M. Smets, M.C.M. Sanden, van de, G.J. Adriaenssens

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Abstract

An interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.
Original languageEnglish
Title of host publicationAmorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A
EditorsJ.R. Abelson
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages99-104
ISBN (Print)1-55899-699-0
Publication statusPublished - 2003
Event2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium - San Francisco, United States
Duration: 22 Apr 200325 Apr 2003

Publication series

NameMaterials Research Society Symposium Proceedings
Volume762
ISSN (Print)0272-9172

Conference

Conference2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium
CountryUnited States
CitySan Francisco
Period22/04/0325/04/03

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    Brinza, M., Kessels, W. M. M., Smets, A. H. M., Sanden, van de, M. C. M., & Adriaenssens, G. J. (2003). Post-transit analysis of transient photocurrents from high-deposition-rate a-Si:H samples. In J. R. Abelson (Ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A (pp. 99-104). (Materials Research Society Symposium Proceedings; Vol. 762). Materials Research Society.