An interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.
|Title of host publication||Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A|
|Place of Publication||Warrendale|
|Publisher||Materials Research Society|
|Publication status||Published - 2003|
|Event||2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium - San Francisco, United States|
Duration: 22 Apr 2003 → 25 Apr 2003
|Name||Materials Research Society Symposium Proceedings|
|Conference||2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium|
|Period||22/04/03 → 25/04/03|
Brinza, M., Kessels, W. M. M., Smets, A. H. M., Sanden, van de, M. C. M., & Adriaenssens, G. J. (2003). Post-transit analysis of transient photocurrents from high-deposition-rate a-Si:H samples. In J. R. Abelson (Ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A (pp. 99-104). (Materials Research Society Symposium Proceedings; Vol. 762). Materials Research Society.