Post-growth enhancement of p-GaN conductivity

F. Karouta, M.J. Kappers, M.C.J.C.M. Krämer, B. Jacobs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Original languageEnglish
Title of host publication17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages284-285
Volume1
ISBN (Print)0780385578
DOIs
Publication statusPublished - 2004
Event17th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2004) - Rio Grande, Puerto Rico
Duration: 7 Nov 200411 Nov 2004
Conference number: 17

Conference

Conference17th Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2004)
Abbreviated titleLEOS 2004
CountryPuerto Rico
CityRio Grande
Period7/11/0411/11/04

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