Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass

J. Pello; P. Saboya; S. Keyvaninia; J.J.G.M. Tol, van der; G. Roelkens; H.P.M.M. Ambrosius; M.K. Smit

Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass

J. Pello, P. Saboya, S. Keyvaninia, J.J.G.M. Tol, van der, G. Roelkens, H.P.M.M. Ambrosius, M.K. Smit

Photonic Integration

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Abstract

We demonstrate the successful fabrication of passive photonic devices in a 300-nm thick Indium phosphide (InP) membrane bonded on glass, using a post-bonding fabrication scheme. Our results show that post-bonding processing can be used to allow double-side processing of InP membrane devices. Furthermore, the yield in InP membrane fabrication can be increased by bonding the membrane prior to patterning. Characterization results show good performance in power splitters and ring resonators (Q ~ 15,000). However, waveguide losses were found to be very high (25 dB/cm) and need to be reduced by e.g. optimizing the lithography steps.

Original language	English
Pages	213-216
Publication status	Published - 2011
Event	16th Annual Symposium of the IEEE Photonics Benelux Chapter - Ghent, Belgium Duration: 1 Dec 2011 → 2 Dec 2011 Conference number: 16 http://www.photonics-benelux.org/symp11/

Conference

Conference	16th Annual Symposium of the IEEE Photonics Benelux Chapter
Country/Territory	Belgium
City	Ghent
Period	1/12/11 → 2/12/11
Internet address	http://www.photonics-benelux.org/symp11/

Bibliographical note

Editor(s): Bienstman, P.; Morthier, G.; Roelkens, G.; et al.
Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium

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title = "Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass",

abstract = "We demonstrate the successful fabrication of passive photonic devices in a 300-nm thick Indium phosphide (InP) membrane bonded on glass, using a post-bonding fabrication scheme. Our results show that post-bonding processing can be used to allow double-side processing of InP membrane devices. Furthermore, the yield in InP membrane fabrication can be increased by bonding the membrane prior to patterning. Characterization results show good performance in power splitters and ring resonators (Q ~ 15,000). However, waveguide losses were found to be very high (25 dB/cm) and need to be reduced by e.g. optimizing the lithography steps.",

author = "J. Pello and P. Saboya and S. Keyvaninia and {Tol, van der}, J.J.G.M. and G. Roelkens and H.P.M.M. Ambrosius and M.K. Smit",

note = "Editor(s): Bienstman, P.; Morthier, G.; Roelkens, G.; et al. Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium; 16th Annual Symposium of the IEEE Photonics Benelux Chapter ; Conference date: 01-12-2011 Through 02-12-2011",

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T1 - Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass

AU - Pello, J.

AU - Saboya, P.

AU - Keyvaninia, S.

AU - Tol, van der, J.J.G.M.

AU - Roelkens, G.

AU - Ambrosius, H.P.M.M.

AU - Smit, M.K.

N1 - Conference code: 16

PY - 2011

Y1 - 2011

N2 - We demonstrate the successful fabrication of passive photonic devices in a 300-nm thick Indium phosphide (InP) membrane bonded on glass, using a post-bonding fabrication scheme. Our results show that post-bonding processing can be used to allow double-side processing of InP membrane devices. Furthermore, the yield in InP membrane fabrication can be increased by bonding the membrane prior to patterning. Characterization results show good performance in power splitters and ring resonators (Q ~ 15,000). However, waveguide losses were found to be very high (25 dB/cm) and need to be reduced by e.g. optimizing the lithography steps.

AB - We demonstrate the successful fabrication of passive photonic devices in a 300-nm thick Indium phosphide (InP) membrane bonded on glass, using a post-bonding fabrication scheme. Our results show that post-bonding processing can be used to allow double-side processing of InP membrane devices. Furthermore, the yield in InP membrane fabrication can be increased by bonding the membrane prior to patterning. Characterization results show good performance in power splitters and ring resonators (Q ~ 15,000). However, waveguide losses were found to be very high (25 dB/cm) and need to be reduced by e.g. optimizing the lithography steps.

M3 - Poster

SP - 213

EP - 216

T2 - 16th Annual Symposium of the IEEE Photonics Benelux Chapter

Y2 - 1 December 2011 through 2 December 2011

ER -

Post-bonding fabrication of photonic devices in an Indium phosphide membrane bonded on glass

Abstract

Conference

Bibliographical note

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