Positive oxide-charge generation during 0.25 µm PMOSFET hot-carrier degradation

R. Woltjer, G. M. Paulzen, H. Lifka, P. Woerlee

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

A new hot-carrier degradation mechanism becomes important in 0.25 µm PMOSFET's. Hot-hole injection generates positive oxide charge near the drain. We determine the time dependence and the oxide-thickness dependence and we show a considerable enhancement of this degradation mechanism for nitrided gate oxides. For many bias conditions and many geometries, the time dependence of PMOSFET degradation can be successfully described by a summation of the time dependences of three separate degradation mechanisms: generation of interface states, negative oxide charge and positive oxide charge.

Original languageEnglish
Pages (from-to)427-429
Number of pages3
JournalIEEE Electron Device Letters
Volume15
Issue number10
DOIs
Publication statusPublished - Oct 1994
Externally publishedYes

Fingerprint Dive into the research topics of 'Positive oxide-charge generation during 0.25 µm PMOSFET hot-carrier degradation'. Together they form a unique fingerprint.

  • Cite this