Abstract
A new hot-carrier degradation mechanism becomes important in 0.25 µm PMOSFET's. Hot-hole injection generates positive oxide charge near the drain. We determine the time dependence and the oxide-thickness dependence and we show a considerable enhancement of this degradation mechanism for nitrided gate oxides. For many bias conditions and many geometries, the time dependence of PMOSFET degradation can be successfully described by a summation of the time dependences of three separate degradation mechanisms: generation of interface states, negative oxide charge and positive oxide charge.
Original language | English |
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Pages (from-to) | 427-429 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 15 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 1994 |
Externally published | Yes |