A new hot-carrier degradation mechanism becomes important in 0.25 µm PMOSFET's. Hot-hole injection generates positive oxide charge near the drain. We determine the time dependence and the oxide-thickness dependence and we show a considerable enhancement of this degradation mechanism for nitrided gate oxides. For many bias conditions and many geometries, the time dependence of PMOSFET degradation can be successfully described by a summation of the time dependences of three separate degradation mechanisms: generation of interface states, negative oxide charge and positive oxide charge.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - Oct 1994|