Position-controlled [100] InP nanowire arrays

J. Wang, S.R. Plissard, M. Hocevar, T.T.T. Vu, T. Zehender, W.G.G. Immink, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

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36 Citations (Scopus)
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We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.
Original languageEnglish
Article number053107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2012


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