Position-controlled [100] InP nanowire arrays

J. Wang; S.R. Plissard; M. Hocevar; T.T.T. Vu; T. Zehender; W.G.G. Immink; M.A. Verheijen; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1063/1.3679136

Position-controlled [100] InP nanowire arrays

J. Wang, S.R. Plissard, M. Hocevar, T.T.T. Vu, T. Zehender, W.G.G. Immink, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

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Abstract

We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

Original language	English
Article number	053107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3679136
Publication status	Published - 2012

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title = "Position-controlled [100] InP nanowire arrays",

abstract = "We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.",

author = "J. Wang and S.R. Plissard and M. Hocevar and T.T.T. Vu and T. Zehender and W.G.G. Immink and M.A. Verheijen and J.E.M. Haverkort and E.P.A.M. Bakkers",

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doi = "10.1063/1.3679136",

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AU - Wang, J.

AU - Plissard, S.R.

AU - Hocevar, M.

AU - Vu, T.T.T.

AU - Zehender, T.

AU - Immink, W.G.G.

AU - Verheijen, M.A.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2012

Y1 - 2012

N2 - We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

AB - We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

U2 - 10.1063/1.3679136

DO - 10.1063/1.3679136

M3 - Article

SN - 0003-6951

VL - 100

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053107

ER -

Position-controlled [100] InP nanowire arrays

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